FTK1206 Todos los transistores

 ..1. Size:585K  first silicon
 ftk1206.pdf

SEMICONDUCTOR FTK1206 TECHNICAL DATA P-Channel Power MOSFET DFNWB2*2-6L-J ID V(BR)DSS RDS(on)MAX m @-4.5V 45 1. DRAIN m -12V 60 -6A 2. DRAIN @-2.5V 3. GATE m @-1.8V 90 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1203 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suita

 8.1. Size:623K  first silicon
 ftk1208.pdf

SEMICONDUCTOR FTK1208 TECHNICAL DATA P-Channel MOSFET ID V(BR)DSS RDS(on) MAX DFNWB2 2-6L-J 28m @-4.5V 32m @-3.7V -8A 40m @-2.5V -12V 63m @-1.8V 150m @-1.5V FEATURE APPLICATION PWM application Advanced trench MOSFET process technology Load switch Ultra low on-resistance with low gate charge Battery charge in cellular handset Equivalen

 9.1. Size:362K  first silicon
 ftk12n10s.pdf

SEMICONDUCTOR FTK12N10S TECHNICAL DATA N-Channel Power MOSFET DESCRIPTION SOP-8 The device uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES D D D D Green Device Available 8 6 5 7 Special process technology for high ESD capability High density cell design for ul

 9.2. Size:360K  first silicon
 ftk123.pdf

SEMICONDUCTOR FTK123 TECHNICAL DATA N-CHANNEL POWER MOSFET 3 2 1 DEVICE MARKING AND ORDERING INFORMATION SOT -23 Device Marking Shipping FTK123LT1G SA 3000/Tape&Reel Drain 3 FTK123LT3G SA 10000/Tape&Reel 1 MAXIMUM RATINGS Gate Rating Symbol Value Unit 2 Drain Source Voltage VDSS 100 Vdc Source Gate Source Voltage Continuous VGS 20 Vdc Non repetitive (tp

 9.3. Size:421K  first silicon
 ftk12n65p f dd.pdf

SEMICONDUCTOR FTK12N65P/F/DD TECHNICAL DATA 12 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse i

 9.4. Size:507K  first silicon
 ftk1216.pdf

SEMICONDUCTOR FTK1216 TECHNICAL DATA P-Channel MOSFET DFNWB2 2-6L-J ID V(BR)DSS RDS(on) MAX 21m @-4.5V 1. DRAIN -12V -16A 2. DRAIN 27m @-2.5V 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suitable for use as a loa