FTK1206 Datasheet and Replacement

SEMICONDUCTORFTK1206TECHNICAL DATA P-Channel Power MOSFET DFNWB2*2-6L-JID V(BR)DSS RDS(on)MAX m@-4.5V 451. DRAIN m-12V 60 -6A 2. DRAIN @-2.5V3. GATE m@-1.8V904. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1203 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suita

SEMICONDUCTORFTK1208TECHNICAL DATAP-Channel MOSFET IDV(BR)DSS RDS(on) MAXDFNWB2 2-6L-J 28m@-4.5V 32m@-3.7V -8A40m@-2.5V-12V63m@-1.8V 150m@-1.5VFEATURE APPLICATION PWM application Advanced trench MOSFET process technology Load switch Ultra low on-resistance with low gate charge Battery charge in cellular handset Equivalen

SEMICONDUCTOR FTK12N10STECHNICAL DATAN-Channel Power MOSFETDESCRIPTION SOP-8The device uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURESDD D D Green Device Available 8 6 5 7 Special process technology for high ESD capability High density cell design for ul

SEMICONDUCTORFTK123TECHNICAL DATAN-CHANNEL POWER MOSFET321DEVICE MARKING AND ORDERING INFORMATIONSOT -23Device Marking ShippingFTK123LT1G SA 3000/Tape&ReelDrain3FTK123LT3G SA 10000/Tape&Reel1MAXIMUM RATINGS GateRating Symbol Value Unit2DrainSource Voltage VDSS 100 VdcSourceGateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp

SEMICONDUCTORFTK12N65P/F/DDTECHNICAL DATA12 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulsei

SEMICONDUCTORFTK1216TECHNICAL DATAP-Channel MOSFET DFNWB22-6L-JIDV(BR)DSS RDS(on) MAX 21m@-4.5V 1. DRAIN -12V -16A 2. DRAIN 27m@-2.5V 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suitable for use as a loa