FTK12N65DD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FTK12N65DD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 115 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET FTK12N65DD

FTK12N65DD Datasheet (PDF)

6.1. Size:421K first silicon
ftk12n65p f dd.pdf

SEMICONDUCTORFTK12N65P/F/DDTECHNICAL DATA12 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulsei

8.1. Size:362K first silicon
ftk12n10s.pdf

SEMICONDUCTOR FTK12N10STECHNICAL DATAN-Channel Power MOSFETDESCRIPTION SOP-8The device uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURESDD D D Green Device Available 8 6 5 7 Special process technology for high ESD capability High density cell design for ul

9.1. Size:585K first silicon
ftk1206.pdf

SEMICONDUCTORFTK1206TECHNICAL DATA P-Channel Power MOSFET DFNWB2*2-6L-JID V(BR)DSS RDS(on)MAX m@-4.5V 451. DRAIN m-12V 60 -6A 2. DRAIN @-2.5V3. GATE m@-1.8V904. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1203 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suita

9.2. Size:360K first silicon
ftk123.pdf

SEMICONDUCTORFTK123TECHNICAL DATAN-CHANNEL POWER MOSFET321DEVICE MARKING AND ORDERING INFORMATIONSOT -23Device Marking ShippingFTK123LT1G SA 3000/Tape&ReelDrain3FTK123LT3G SA 10000/Tape&Reel1MAXIMUM RATINGS GateRating Symbol Value Unit2DrainSource Voltage VDSS 100 VdcSourceGateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp

9.3. Size:507K first silicon
ftk1216.pdf

SEMICONDUCTORFTK1216TECHNICAL DATAP-Channel MOSFET DFNWB22-6L-JIDV(BR)DSS RDS(on) MAX 21m@-4.5V 1. DRAIN -12V -16A 2. DRAIN 27m@-2.5V 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suitable for use as a loa

9.4. Size:623K first silicon
ftk1208.pdf

SEMICONDUCTORFTK1208TECHNICAL DATAP-Channel MOSFET IDV(BR)DSS RDS(on) MAXDFNWB2 2-6L-J 28m@-4.5V 32m@-3.7V -8A40m@-2.5V-12V63m@-1.8V 150m@-1.5VFEATURE APPLICATION PWM application Advanced trench MOSFET process technology Load switch Ultra low on-resistance with low gate charge Battery charge in cellular handset Equivalen

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: