All MOSFET. FTK12N65DD Datasheet

 

FTK12N65DD Datasheet and Replacement


   Type Designator: FTK12N65DD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO263
 

 FTK12N65DD substitution

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FTK12N65DD Datasheet (PDF)

 6.1. Size:421K  first silicon
ftk12n65p f dd.pdf pdf_icon

FTK12N65DD

SEMICONDUCTORFTK12N65P/F/DDTECHNICAL DATA12 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulsei

 8.1. Size:362K  first silicon
ftk12n10s.pdf pdf_icon

FTK12N65DD

SEMICONDUCTOR FTK12N10STECHNICAL DATAN-Channel Power MOSFETDESCRIPTION SOP-8The device uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURESDD D D Green Device Available 8 6 5 7 Special process technology for high ESD capability High density cell design for ul

 9.1. Size:585K  first silicon
ftk1206.pdf pdf_icon

FTK12N65DD

SEMICONDUCTORFTK1206TECHNICAL DATA P-Channel Power MOSFET DFNWB2*2-6L-JID V(BR)DSS RDS(on)MAX m@-4.5V 451. DRAIN m-12V 60 -6A 2. DRAIN @-2.5V3. GATE m@-1.8V904. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The FTK1203 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suita

 9.2. Size:360K  first silicon
ftk123.pdf pdf_icon

FTK12N65DD

SEMICONDUCTORFTK123TECHNICAL DATAN-CHANNEL POWER MOSFET321DEVICE MARKING AND ORDERING INFORMATIONSOT -23Device Marking ShippingFTK123LT1G SA 3000/Tape&ReelDrain3FTK123LT3G SA 10000/Tape&Reel1MAXIMUM RATINGS GateRating Symbol Value Unit2DrainSource Voltage VDSS 100 VdcSourceGateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp

Datasheet: FTK5N80F , FTK5N80P , FTK50N03D , FTK50N06P , FTK1206 , FTK1208 , FTK1216 , FTK12N10S , RFP50N06 , FTK12N65F , FTK12N65P , FTK138 , FTK138D , FTK138U , FTK15N10D , FTK1N60P , FTK1N60F .

History: AP9972GS | BL25N60-W | SDF054JAA-S | HM6409 | RTR030N05FRA | SM4601CSK | AOD502

Keywords - FTK12N65DD MOSFET datasheet

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