FTK4N60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FTK4N60D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 106 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 42 nS
Conductancia de drenaje-sustrato (Cd): 35 pF
Resistencia entre drenaje y fuente RDS(on): 2.5 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET FTK4N60D
FTK4N60D Datasheet (PDF)
ftk4n60p f d i.pdf
SEMICONDUCTORFTK4N60P / F / D / ITECHNICAL DATAPower MOSFET4 Amps, 600 VoltI :N-CHANNEL POWER MOSFET1TO - 251D :DESCRIPTION1TO - 252The FTK 4N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usua
ftk4n65p f d i.pdf
SEMICONDUCTORFTK4N65P/F/I/DTECHNICAL DATA4 Amps, 650 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251D :DESCRIPTION1TO - 252The FTK4N65 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used
ftk4n70p f d i.pdf
SEMICONDUCTORFTK4N70P/F/I/DTECHNICAL DATA4 Amps, 700 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251DESCRIPTIOND :1TO - 252The FTK4N70 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used
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