FTK4N60D. Аналоги и основные параметры

Наименование производителя: FTK4N60D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 106 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 42 ns

Cossⓘ - Выходная емкость: 35 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm

Тип корпуса: TO252

Аналог (замена) для FTK4N60D

- подборⓘ MOSFET транзистора по параметрам

 

FTK4N60D даташит

 7.1. Size:171K  first silicon
 ftk4n60p f d i.pdf pdf_icon

FTK4N60D

SEMICONDUCTOR FTK4N60P / F / D / I TECHNICAL DATA Power MOSFET 4 Amps, 600 Volt I N-CHANNEL POWER MOSFET 1 TO - 251 D DESCRIPTION 1 TO - 252 The FTK 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche P characteristics. This power MOSFET is usua

 8.1. Size:381K  first silicon
 ftk4n65p f d i.pdf pdf_icon

FTK4N60D

SEMICONDUCTOR FTK4N65P/F/I/D TECHNICAL DATA 4 Amps, 650 Volt Power MOSFET N-CHANNEL POWER MOSFET I 1 TO - 251 D DESCRIPTION 1 TO - 252 The FTK4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche P characteristics. This power MOSFET is usually used

 9.1. Size:398K  first silicon
 ftk4n70p f d i.pdf pdf_icon

FTK4N60D

SEMICONDUCTOR FTK4N70P/F/I/D TECHNICAL DATA 4 Amps, 700 Volt Power MOSFET N-CHANNEL POWER MOSFET I 1 TO - 251 DESCRIPTION D 1 TO - 252 The FTK4N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche P characteristics. This power MOSFET is usually used

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