FTK2005DFN23 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FTK2005DFN23 Datasheet (PDF)

..1. Size:818K first silicon
ftk2005dfn23.pdf pdf_icon

SEMICONDUCTORFTK2005DFN23TECHNICAL DATADFNWB2 3-6L-CDual N-Channel MOSFETID V(BR)DSS RDS(on)MAX 13 Vm@10 14 @4.5Vm 15.5m@3.8V8A20V.5V 19m@227m@1.8VDESCRIPTIONThe FTK2005DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge.It is ESD protected. This device is suitable for use as a uni-directional or bi-direction

9.1. Size:530K first silicon
ftk2012.pdf pdf_icon

SEMICONDUCTORFTK2012TECHNICAL DATAN-Channel MOSFET DFNWB22-6L-JID V(BR)DSS RDS(on)MAX m@ 4.5V111. DRAIN @ 13m 2.5V2. DRAIN Am@1.8V 121620V 3. GATE 4. SOURCE 22m@1.5V5. DRAIN 41m@1.2V6. DRAIN FEATURES APPLICATION TrenchFET Power MOSFET Load Switch for Portable Applications Small package DFNWB22-6L-J Equivalent Circui

9.2. Size:425K first silicon
ftk20n06d.pdf pdf_icon

SEMICONDUCTORFTK20N06DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK20N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0

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