FTK2005DFN23 Specs and Replacement
Type Designator: FTK2005DFN23
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: DFN2X3
FTK2005DFN23 substitution
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FTK2005DFN23 datasheet
ftk2005dfn23.pdf
SEMICONDUCTOR FTK2005DFN23 TECHNICAL DATA DFNWB2 3-6L-C Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX 13 V m @10 14 @4.5V m 15.5m @3.8V 8 A 20V .5V 19m @2 27m @1.8V DESCRIPTION The FTK2005DFN23 uses advanced trench technology to provide excellent RDS(ON) low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-direction... See More ⇒
ftk2012.pdf
SEMICONDUCTOR FTK2012 TECHNICAL DATA N-Channel MOSFET DFNWB2 2-6L-J ID V(BR)DSS RDS(on)MAX m @ 4.5V 11 1. DRAIN @ 13m 2.5V 2. DRAIN A m @1.8V 12 16 20V 3. GATE 4. SOURCE 22m @1.5V 5. DRAIN 41m @1.2V 6. DRAIN FEATURES APPLICATION TrenchFET Power MOSFET Load Switch for Portable Applications Small package DFNWB2 2-6L-J Equivalent Circui... See More ⇒
ftk20n06d.pdf
SEMICONDUCTOR FTK20N06D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK20N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0... See More ⇒
Detailed specifications: FTK4N65D, FTK4N65F, FTK4N65I, FTK4N65P, FTK4N70D, FTK4N70F, FTK4N70I, FTK4N70P, 75N75, FTK2012, FTK20N06D, FTK2101, FTK2102, FTK2301, FTK2302, FTK2304, FTK2306
Keywords - FTK2005DFN23 MOSFET specs
FTK2005DFN23 cross reference
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FTK2005DFN23 substitution
FTK2005DFN23 replacement
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