FTK2312 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FTK2312
   Código: S12
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET FTK2312

FTK2312 Datasheet (PDF)

..1. Size:648K first silicon
ftk2312.pdf

SEMICONDUCTORFTK2312TECHNICAL DATA DDESCRIPTIONThe FTK2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagramGENERAL FEATURES D VDS = 20V,ID = 4.5A 3RDS(ON)

8.1. Size:185K first silicon
ftk2310.pdf

SEMICONDUCTORFTK2310TECHNICAL DATAFTK2310 N-Channel MOSFET DGDESCRIPTIONThe FTK2310 uses advanced trench technology to provide excellent SSchematic diagram RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. D3This device is suitable for use as a battery protection or in other switching S10application. G 1 2 SMarking and pin Assignment F

9.1. Size:233K first silicon
ftk2341e.pdf

SEMICONDUCTORFTK2341ETECHNICAL DATADESCRIPTION The FTK2341E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. GENERAL FEATURES VDS = -20V,ID =-4A Schematic diagram RDS(ON)

9.2. Size:420K first silicon
ftk2306a.pdf

SEMICONDUCTOR FTK2306ATECHNICAL DATAN-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 47m@10V30V3.16A65m@4.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (at TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source

9.3. Size:281K first silicon
ftk2304.pdf

SEMICONDUCTORFTK2304TECHNICAL DATADDESCRIPTIONThe FTK2304 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURES D VDS = 30V ,ID = 3.3A 3RDS(ON)

9.4. Size:247K first silicon
ftk2302.pdf

SEMICONDUCTORFTK2302TECHNICAL DATA20V N-Channel Enhancement-Mode MOSFET DDESCRIPTION The FTK2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,I

9.5. Size:338K first silicon
ftk2324.pdf

SEMICONDUCTORFTK2324TECHNICAL DATAN-Channel MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 234m@10V100V 267m@ 6V 2A1. GATE 278m@4.5V 2. SOURCE 3. DRA N FEATURE APPLICATION TrenchFET Power MOSFET DC/DC Converters Low RDS(ON) Load Switch Surface Mount Package LED Backlighting in LCD TVs MARKING Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25 unless

9.6. Size:429K first silicon
ftk2333.pdf

SEMICONDUCTORFTK2333TECHNICAL DATAP-channel MOSFET DESCRIPTION DThe FTK2333 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 1.8V. This device is suitable for use asG a load switch applications.SGENERAL FEATURES Schematic diagram IDV(BR)DSS RDS(on) MAX 28m@ -4.5V 32m@-3.7V S33-6A4

9.7. Size:344K first silicon
ftk2306.pdf

SEMICONDUCTOR FTK2306TECHNICAL DATADDESCRIPTION The FTK2306 uses advanced trench technology to provide excellent RDS(ON), Glow gate charge and operation with gate voltages as low as 2.5V. SSchematic diagramGENERAL FEATURES D VDS = 30V,ID = 5A 3RDS(ON)

9.8. Size:284K first silicon
ftk2301.pdf

SEMICONDUCTORFTK2301TECHNICAL DATA20V P-Channel Enhancement-Mode MOSFET 3 Features Low on-resistance2R =4.5V, I =2.8A ) = 100mDS(ON) (VGS ds1R =2.5V, I =2.0A ) = 150mDS(ON) (VGS dsSOT 23 (TO236AB)High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM3D We declare that

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