Справочник MOSFET. FTK2312

 

FTK2312 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FTK2312
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для FTK2312

 

 

FTK2312 Datasheet (PDF)

 ..1. Size:648K  first silicon
ftk2312.pdf

FTK2312
FTK2312

SEMICONDUCTORFTK2312TECHNICAL DATA DDESCRIPTIONThe FTK2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagramGENERAL FEATURES D VDS = 20V,ID = 4.5A 3RDS(ON)

 8.1. Size:185K  first silicon
ftk2310.pdf

FTK2312
FTK2312

SEMICONDUCTORFTK2310TECHNICAL DATAFTK2310 N-Channel MOSFET DGDESCRIPTIONThe FTK2310 uses advanced trench technology to provide excellent SSchematic diagram RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. D3This device is suitable for use as a battery protection or in other switching S10application. G 1 2 SMarking and pin Assignment F

 9.1. Size:233K  first silicon
ftk2341e.pdf

FTK2312
FTK2312

SEMICONDUCTORFTK2341ETECHNICAL DATADESCRIPTION The FTK2341E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. GENERAL FEATURES VDS = -20V,ID =-4A Schematic diagram RDS(ON)

 9.2. Size:420K  first silicon
ftk2306a.pdf

FTK2312
FTK2312

SEMICONDUCTOR FTK2306ATECHNICAL DATAN-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 47m@10V30V3.16A65m@4.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (at TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source

 9.3. Size:281K  first silicon
ftk2304.pdf

FTK2312
FTK2312

SEMICONDUCTORFTK2304TECHNICAL DATADDESCRIPTIONThe FTK2304 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURES D VDS = 30V ,ID = 3.3A 3RDS(ON)

 9.4. Size:247K  first silicon
ftk2302.pdf

FTK2312
FTK2312

SEMICONDUCTORFTK2302TECHNICAL DATA20V N-Channel Enhancement-Mode MOSFET DDESCRIPTION The FTK2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,I

 9.5. Size:338K  first silicon
ftk2324.pdf

FTK2312
FTK2312

SEMICONDUCTORFTK2324TECHNICAL DATAN-Channel MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 234m@10V100V 267m@ 6V 2A1. GATE 278m@4.5V 2. SOURCE 3. DRA N FEATURE APPLICATION TrenchFET Power MOSFET DC/DC Converters Low RDS(ON) Load Switch Surface Mount Package LED Backlighting in LCD TVs MARKING Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25 unless

 9.6. Size:429K  first silicon
ftk2333.pdf

FTK2312
FTK2312

SEMICONDUCTORFTK2333TECHNICAL DATAP-channel MOSFET DESCRIPTION DThe FTK2333 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 1.8V. This device is suitable for use asG a load switch applications.SGENERAL FEATURES Schematic diagram IDV(BR)DSS RDS(on) MAX 28m@ -4.5V 32m@-3.7V S33-6A4

 9.7. Size:344K  first silicon
ftk2306.pdf

FTK2312
FTK2312

SEMICONDUCTOR FTK2306TECHNICAL DATADDESCRIPTION The FTK2306 uses advanced trench technology to provide excellent RDS(ON), Glow gate charge and operation with gate voltages as low as 2.5V. SSchematic diagramGENERAL FEATURES D VDS = 30V,ID = 5A 3RDS(ON)

 9.8. Size:284K  first silicon
ftk2301.pdf

FTK2312
FTK2312

SEMICONDUCTORFTK2301TECHNICAL DATA20V P-Channel Enhancement-Mode MOSFET 3 Features Low on-resistance2R =4.5V, I =2.8A ) = 100mDS(ON) (VGS ds1R =2.5V, I =2.0A ) = 150mDS(ON) (VGS dsSOT 23 (TO236AB)High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM3D We declare that

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top