FTK3400 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FTK3400
Código: R0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.38 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.4 V
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 99 pF
Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET FTK3400
FTK3400 Datasheet (PDF)
ftk3400.pdf
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SEMICONDUCTORFTK3400TECHNICAL DATAN-Channel Enhancement Mode Field Effect Transistor DFEATURE GHigh dense cell design for extremely low R SDS(ON)Schematic diagram Exceptional on-resistance and maximum DC current capability D3R0G 1 2 SMarking and pin AssignmentSOT-23 top view Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit
ftk3404.pdf
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SEMICONDUCTORFTK3404TECHNICAL DATAN-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX 3 30m@ 10V30V5.8A 2142m@4.5V SOT231. GATE DESCRIPTION 2. SOURCE 3. DRAIN The FTK3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit able for use as a load switch or in PWM applications.The s
ftk3407l.pdf
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SEMICONDUCTORFTK3407LTECHNICAL DATAP-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.MARKING: R7 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit
ftk3407.pdf
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SEMICONDUCTORFTK3407TECHNICAL DATADDESCRIPTIONThe FTK3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.1A 3RDS(ON)
ftk3401.pdf
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SEMICONDUCTORFTK3401TECHNICAL DATADDESCRIPTIONThe FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.2A 3RDS(ON)
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .