FTK3400 Specs and Replacement

Type Designator: FTK3400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT23

FTK3400 substitution

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FTK3400 datasheet

 ..1. Size:232K  first silicon
 ftk3400.pdf pdf_icon

FTK3400

SEMICONDUCTOR FTK3400 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor D FEATURE G High dense cell design for extremely low R S DS(ON) Schematic diagram Exceptional on-resistance and maximum DC current capability D 3 R0 G 1 2 S Marking and pin Assignment SOT-23 top view Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit ... See More ⇒

 8.1. Size:305K  first silicon
 ftk3404.pdf pdf_icon

FTK3400

SEMICONDUCTOR FTK3404 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX 3 30m @ 10V 30V 5.8A 2 1 42m @4.5V SOT 23 1. GATE DESCRIPTION 2. SOURCE 3. DRAIN The FTK3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit able for use as a load switch or in PWM applications.The s... See More ⇒

 8.2. Size:380K  first silicon
 ftk3407l.pdf pdf_icon

FTK3400

SEMICONDUCTOR FTK3407L TECHNICAL DATA P-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING R7 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit ... See More ⇒

 8.3. Size:229K  first silicon
 ftk3407.pdf pdf_icon

FTK3400

SEMICONDUCTOR FTK3407 TECHNICAL DATA D DESCRIPTION The FTK3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D VDS = -30V,ID = -4.1A 3 RDS(ON) ... See More ⇒

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Detailed specifications: FTK3004D, FTK3018, FTK3022, FTK3051, FTK3134K, FTK3134KD, FTK3139K, FTK3341, IRF840, FTK3401, FTK3404, FTK3407, FTK3407L, FTK3415, FTK3415L, FTK3439KD, FTK3443

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.