FTK3443 Todos los transistores

 ..1. Size:236K  first silicon
 ftk3443.pdf

SEMICONDUCTOR FTK3443 TECHNICAL DATA P-Channel 20-V(D-S) MOSFET B FEATURE B1 Fast Switching Speed DIM MILLIMETERS 1 6 Low Gate Charge A 2 92 0 1 2 5 A1 1 9 0 1 High Performance Trench Technology for extremely Low RDS(on) B 2 8 0 15 3 4 D B1 1 6 0 1 C 0 95 D 0 4 0 1 G 0 1MAX This P-Channel MOSFET is produced using advanced PowerTrench H 1 1 0 05 process tha

 9.1. Size:478K  first silicon
 ftk3415l.pdf

SEMICONDUCTOR FTK3415L TECHNICAL DATA P-Channel 20V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-6L 50m @-4.5V -4.0A -20V 60m @-2.5V 73m @-1. 8V FEATURE APPLICATION Excellent RDS(ON), low gate charge,low gate voltage Load switch and in PWM applicatopns High power and current handing capability MARKING Equivalent Circuit PIN1 Maximum ratings (Ta=25 unless otherwise

 9.2. Size:232K  first silicon
 ftk3400.pdf

SEMICONDUCTOR FTK3400 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor D FEATURE G High dense cell design for extremely low R S DS(ON) Schematic diagram Exceptional on-resistance and maximum DC current capability D 3 R0 G 1 2 S Marking and pin Assignment SOT-23 top view Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit

 9.3. Size:681K  first silicon
 ftk3415.pdf

SEMICONDUCTOR FTK3415 TECHNICAL DATA DESCRIPTION D The FTK3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as G a load switch applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID =-4A RDS(ON)

 9.4. Size:305K  first silicon
 ftk3404.pdf

SEMICONDUCTOR FTK3404 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX 3 30m @ 10V 30V 5.8A 2 1 42m @4.5V SOT 23 1. GATE DESCRIPTION 2. SOURCE 3. DRAIN The FTK3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit able for use as a load switch or in PWM applications.The s

 9.5. Size:380K  first silicon
 ftk3407l.pdf

SEMICONDUCTOR FTK3407L TECHNICAL DATA P-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING R7 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit

 9.6. Size:229K  first silicon
 ftk3407.pdf

SEMICONDUCTOR FTK3407 TECHNICAL DATA D DESCRIPTION The FTK3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D VDS = -30V,ID = -4.1A 3 RDS(ON)

 9.7. Size:236K  first silicon
 ftk3401.pdf

SEMICONDUCTOR FTK3401 TECHNICAL DATA D DESCRIPTION The FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D VDS = -30V,ID = -4.2A 3 RDS(ON)

 9.8. Size:578K  first silicon
 ftk3439kd.pdf

SEMICONDUCTOR FTK3439KD TECHNICAL DATA N channel+P Channel MOS FET ID V(BR)DSS RDS(on)MAX SOT-363 380m @4.5V 450m @2.5V 20V 0.75A 800m @1.8V 520m @-4.5V -20V 700m @-2.5V -0.66A 950m @-1.8V FEATURE APPLICATION Surface Mount Package Load/ Power Switching Interfacing Switching Low RDS(on) Operated at Low Logic Level Gate Drive Battery Management for