FTK35N03PDFN33 Todos los transistores

 

FTK35N03PDFN33 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTK35N03PDFN33
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: PDFN3X3
 

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FTK35N03PDFN33 Datasheet (PDF)

 ..1. Size:586K  first silicon
 ftk35n03pdfn33.pdf pdf_icon

FTK35N03PDFN33

SEMICONDUCTORFTK35N03PDFN33TECHNICAL DATAN-Channel Power MOSFETDESCRIPTION PDFN3.33.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char

 8.1. Size:668K  first silicon
 ftk35n33pdfn56.pdf pdf_icon

FTK35N03PDFN33

SEMICONDUCTORFTK35N03PDFN56TECHNICAL DATAN-Channel Power MOSFETPDFN56-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

Otros transistores... FTK3401 , FTK3404 , FTK3407 , FTK3407L , FTK3415 , FTK3415L , FTK3439KD , FTK3443 , IRFP260N , FTK35N03PDFN56 , FTK3610 , FTK3615 , FTK3620 , FTK3N80I , FTK3N80D , FTK3N80P , FTK3N80F .

History: LSB55R050GT | HM10P10D | FDU6688 | UPA1950

 

 
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