FTK3620 Todos los transistores

 

FTK3620 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTK3620
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOP8
 

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FTK3620 Datasheet (PDF)

 ..1. Size:425K  first silicon
 ftk3620.pdf pdf_icon

FTK3620

SEMICONDUCTOR FTK3620TECHNICAL DATADESCRIPTION D 1D 2The FTK3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is G 1 G 2suitable for use as a load switch or in PWM applications. S 1 S 2Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 VDS = 30V,ID =7A 6 58 7RDS(ON)

 9.1. Size:211K  first silicon
 ftk3615.pdf pdf_icon

FTK3620

SEMICONDUCTOR FTK3615 TECHNICAL DATADDESCRIPTION The FTK3615 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram D D D DGENERAL FEATURES 58 67 VDS = - 30V,ID = -10A 3615RDS(ON)

 9.2. Size:345K  first silicon
 ftk3610.pdf pdf_icon

FTK3620

SEMICONDUCTORFTK3610TECHNICAL DATADDESCRIPTION The FTF3610 uses advanced trench Gtechnology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in SPWM applications. Schematic diagram D D D D6 5GENERAL FEATURES 8 7 VDS = 30V,ID =11A 3610RDS(ON)

Otros transistores... FTK3415 , FTK3415L , FTK3439KD , FTK3443 , FTK35N03PDFN33 , FTK35N03PDFN56 , FTK3610 , FTK3615 , AO3400 , FTK3N80I , FTK3N80D , FTK3N80P , FTK3N80F , FTK4004 , FTK4015D , FTK40N10D , FTK40P04D .

 

 
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