FTK3620 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FTK3620
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 75 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de FTK3620 MOSFET
FTK3620 Datasheet (PDF)
ftk3620.pdf

SEMICONDUCTOR FTK3620TECHNICAL DATADESCRIPTION D 1D 2The FTK3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is G 1 G 2suitable for use as a load switch or in PWM applications. S 1 S 2Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 VDS = 30V,ID =7A 6 58 7RDS(ON)
ftk3615.pdf

SEMICONDUCTOR FTK3615 TECHNICAL DATADDESCRIPTION The FTK3615 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram D D D DGENERAL FEATURES 58 67 VDS = - 30V,ID = -10A 3615RDS(ON)
ftk3610.pdf

SEMICONDUCTORFTK3610TECHNICAL DATADDESCRIPTION The FTF3610 uses advanced trench Gtechnology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in SPWM applications. Schematic diagram D D D D6 5GENERAL FEATURES 8 7 VDS = 30V,ID =11A 3610RDS(ON)
Otros transistores... FTK3415 , FTK3415L , FTK3439KD , FTK3443 , FTK35N03PDFN33 , FTK35N03PDFN56 , FTK3610 , FTK3615 , IRFB4227 , FTK3N80I , FTK3N80D , FTK3N80P , FTK3N80F , FTK4004 , FTK4015D , FTK40N10D , FTK40P04D .
History: UD4809 | NCE0224K | MT4435ACTR | DMP2004VK | AP4232GM-HF | SKP253 | AP4800AGM
History: UD4809 | NCE0224K | MT4435ACTR | DMP2004VK | AP4232GM-HF | SKP253 | AP4800AGM



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