FTK3620
MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK3620
Marking Code: 3620
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
SOP8
FTK3620
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK3620
Datasheet (PDF)
..1. Size:425K first silicon
ftk3620.pdf
SEMICONDUCTOR FTK3620TECHNICAL DATADESCRIPTION D 1D 2The FTK3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is G 1 G 2suitable for use as a load switch or in PWM applications. S 1 S 2Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 VDS = 30V,ID =7A 6 58 7RDS(ON)
9.1. Size:211K first silicon
ftk3615.pdf
SEMICONDUCTOR FTK3615 TECHNICAL DATADDESCRIPTION The FTK3615 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram D D D DGENERAL FEATURES 58 67 VDS = - 30V,ID = -10A 3615RDS(ON)
9.2. Size:345K first silicon
ftk3610.pdf
SEMICONDUCTORFTK3610TECHNICAL DATADDESCRIPTION The FTF3610 uses advanced trench Gtechnology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in SPWM applications. Schematic diagram D D D D6 5GENERAL FEATURES 8 7 VDS = 30V,ID =11A 3610RDS(ON)
Datasheet: IRFP360LC
, IRFP3710
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