FTK4004 Todos los transistores

 

FTK4004 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTK4004

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 200 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 15.6 nS

Conductancia de drenaje-sustrato (Cd): 300 pF

Resistencia drenaje-fuente RDS(on): 0.004 Ohm

Empaquetado / Estuche: TO220

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FTK4004 Datasheet (PDF)

1.1. ftk4004.pdf Size:578K _first_silicon

FTK4004
FTK4004

SEMICONDUCTOR FTK4004 TECHNICAL DATA Feathers: ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 mΩ(max.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK4004 is a new generation of high voltage and low curre

5.1. ftk40n10d.pdf Size:342K _first_silicon

FTK4004
FTK4004

SEMICONDUCTOR FTK40N10D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION DIM MILLIMETERS This advanced high voltage MOSFET is designed to stand high A 6 50 ± 0 2 B 5 60 ± 0 2 C 5 20 ± 0 2 energy in the avalanche mode and switch efficiently. D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 This new high energy device also offers a drain H H 1 00 MAX I 2 30

5.2. ftk4015d.pdf Size:375K _first_silicon

FTK4004
FTK4004

SEMICONDUCTOR FTK4015D TECHNICAL DATA Main Product Characteristics: VDSS -40V D RDS(on) 11mΩ (typ.) G ID -20A S Schematic diagram D Features and Benefits: Advanced trench MOSFET process technology S Special designed for PWM, load switching and G TO-252 top view general purpose applications Ultra low on-resistance with low gate charge High Power and current

 5.3. ftk40p04d.pdf Size:373K _first_silicon

FTK4004
FTK4004

SEMICONDUCTOR FTK40P04D TECHNICAL DATA FTK40P04 P-Channel Power MOSFET A I DESCRIPTION C J The FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERS A 6 50 ± 0 2 B 5 60 ± 0 2 This device is well suited for high current load applications. C 5 20 ± 0 2 D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 H H 1 00 MA

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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