FTK4004 MOSFET PDF: N-Ch, 40V, 200A. Full specification with pinout and replacement list

FTK4004 PDF Specs and Replacement

   Type Designator: FTK4004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 15.6 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220

FTK4004 substitution

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FTK4004 PDF Specs

..1. Size:578K first silicon
ftk4004.pdf pdf_icon

SEMICONDUCTOR FTK4004 TECHNICAL DATA Feathers ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 m max. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The FTK4004 is a new generation of high voltage and low curre... See More ⇒

9.1. Size:373K first silicon
ftk40p04d.pdf pdf_icon

SEMICONDUCTOR FTK40P04D TECHNICAL DATA FTK40P04 P-Channel Power MOSFET A I DESCRIPTION C J The FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 This device is well suited for high current load applications. C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MA... See More ⇒

9.2. Size:342K first silicon
ftk40n10d.pdf pdf_icon

SEMICONDUCTOR FTK40N10D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION DIM MILLIMETERS This advanced high voltage MOSFET is designed to stand high A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 energy in the avalanche mode and switch efficiently. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 This new high energy device also offers a drain H H 1 00 MAX I 2 30 ... See More ⇒

9.3. Size:375K first silicon
ftk4015d.pdf pdf_icon

SEMICONDUCTOR FTK4015D TECHNICAL DATA Main Product Characteristics VDSS -40V D RDS(on) 11m (typ.) G ID 20A S Schematic diagram D Features and Benefits Advanced trench MOSFET process technology S Special designed for PWM, load switching and G TO-252 top view general purpose applications Ultra low on-resistance with low gate charge High Power and current... See More ⇒

Detailed specifications: FTK35N03PDFN56 , FTK3610 , FTK3615 , FTK3620 , FTK3N80I , FTK3N80D , FTK3N80P , FTK3N80F , IRFB4115 , FTK4015D , FTK40N10D , FTK40P04D , FTK4406 , FTK4407 , FTK4409 , FTK4410 , FTK4410D .