All MOSFET. FTK4004 Datasheet

 

FTK4004 MOSFET. Datasheet pdf. Equivalent

Type Designator: FTK4004

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 200 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15.6 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: TO220

FTK4004 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTK4004 Datasheet (PDF)

0.1. ftk4004.pdf Size:578K _first_silicon

FTK4004
FTK4004

SEMICONDUCTOR FTK4004 TECHNICAL DATA Feathers: ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 mΩ(max.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK4004 is a new generation of high voltage and low curre

9.1. ftk40n10d.pdf Size:342K _first_silicon

FTK4004
FTK4004

SEMICONDUCTOR FTK40N10D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION DIM MILLIMETERS This advanced high voltage MOSFET is designed to stand high A 6 50 ± 0 2 B 5 60 ± 0 2 C 5 20 ± 0 2 energy in the avalanche mode and switch efficiently. D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 This new high energy device also offers a drain H H 1 00 MAX I 2 30

9.2. ftk4015d.pdf Size:375K _first_silicon

FTK4004
FTK4004

SEMICONDUCTOR FTK4015D TECHNICAL DATA Main Product Characteristics: VDSS -40V D RDS(on) 11mΩ (typ.) G ID -20A S Schematic diagram D Features and Benefits: Advanced trench MOSFET process technology S Special designed for PWM, load switching and G TO-252 top view general purpose applications Ultra low on-resistance with low gate charge High Power and current

 9.3. ftk40p04d.pdf Size:373K _first_silicon

FTK4004
FTK4004

SEMICONDUCTOR FTK40P04D TECHNICAL DATA FTK40P04 P-Channel Power MOSFET A I DESCRIPTION C J The FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERS A 6 50 ± 0 2 B 5 60 ± 0 2 This device is well suited for high current load applications. C 5 20 ± 0 2 D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 H H 1 00 MA

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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