FTK40N10D Todos los transistores

 ..1. Size:342K  first silicon
 ftk40n10d.pdf

SEMICONDUCTOR FTK40N10D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION DIM MILLIMETERS This advanced high voltage MOSFET is designed to stand high A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 energy in the avalanche mode and switch efficiently. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 This new high energy device also offers a drain H H 1 00 MAX I 2 30

 9.1. Size:373K  first silicon
 ftk40p04d.pdf

SEMICONDUCTOR FTK40P04D TECHNICAL DATA FTK40P04 P-Channel Power MOSFET A I DESCRIPTION C J The FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 This device is well suited for high current load applications. C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MA

 9.2. Size:578K  first silicon
 ftk4004.pdf

SEMICONDUCTOR FTK4004 TECHNICAL DATA Feathers ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 m max. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The FTK4004 is a new generation of high voltage and low curre

 9.3. Size:375K  first silicon
 ftk4015d.pdf

SEMICONDUCTOR FTK4015D TECHNICAL DATA Main Product Characteristics VDSS -40V D RDS(on) 11m (typ.) G ID 20A S Schematic diagram D Features and Benefits Advanced trench MOSFET process technology S Special designed for PWM, load switching and G TO-252 top view general purpose applications Ultra low on-resistance with low gate charge High Power and current