All MOSFET. FTK40N10D Datasheet

 

FTK40N10D MOSFET. Datasheet pdf. Equivalent


   Type Designator: FTK40N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 94 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252

 FTK40N10D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTK40N10D Datasheet (PDF)

 ..1. Size:342K  first silicon
 ftk40n10d.pdf

FTK40N10D FTK40N10D

SEMICONDUCTORFTK40N10DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION DIM MILLIMETERSThis advanced high voltage MOSFET is designed to stand high A 6 50 0 2B 5 60 0 2C 5 20 0 2energy in the avalanche mode and switch efficiently. D 1 50 0 2E 2 70 0 2F 2 30 0 1This new high energy device also offers a drainHH 1 00 MAXI 2 30

 9.1. Size:373K  first silicon
 ftk40p04d.pdf

FTK40N10D FTK40N10D

SEMICONDUCTORFTK40P04DTECHNICAL DATAFTK40P04 P-Channel Power MOSFET AIDESCRIPTION CJThe FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2This device is well suited for high current load applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MA

 9.2. Size:578K  first silicon
 ftk4004.pdf

FTK40N10D FTK40N10D

SEMICONDUCTORFTK4004TECHNICAL DATAFeathers: ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 mmax. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK4004 is a new generation of high voltage and low curre

 9.3. Size:375K  first silicon
 ftk4015d.pdf

FTK40N10D FTK40N10D

SEMICONDUCTORFTK4015DTECHNICAL DATAMain Product Characteristics: VDSS -40V D RDS(on) 11m (typ.) GID 20A SSchematic diagram DFeatures and Benefits: Advanced trench MOSFET process technology S Special designed for PWM, load switching and GTO-252 top viewgeneral purpose applications Ultra low on-resistance with low gate charge High Power and current

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: KTD2005

 

 
Back to Top