FTK4438 Todos los transistores

 

FTK4438 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTK4438
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOP8
 

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FTK4438 Datasheet (PDF)

 ..1. Size:496K  first silicon
ftk4438.pdf pdf_icon

FTK4438

SEMICONDUCTOR FTK4438TECHNICAL DATADESCRIPTION The FTK4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switchor in PWM applications.Schematic diagramD D D DGENERAL FEATURES 7 6 58 VDS = 60V, ID = 8.2A RDS(ON)

 8.1. Size:423K  first silicon
ftk4435.pdf pdf_icon

FTK4438

SEMICONDUCTOR FTK4435TECHNICAL DATA DDESCRIPTION The FTK4435 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagramD D D DGENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -9.1A RDS(ON)

 9.1. Size:231K  first silicon
ftk4414.pdf pdf_icon

FTK4438

SEMICONDUCTOR FTK4414 TECHNICAL DATADDESCRIPTIONThe FTK4414 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD D D D VDS = 30V,ID = 8.5A 8 7 6 5RDS(ON)

 9.2. Size:505K  first silicon
ftk4410d.pdf pdf_icon

FTK4438

SEMICONDUCTORFTK4410DTECHNICAL DATAN-Channel MOSFET AIDESCRIPTIONCJThe FTK410D uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. DIM MILLIMETERSThis device is suitable for use as a load switch A 6 50 0 2B 5 60 0 2or in PWM applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAXI 2 30 0

Otros transistores... FTK40P04D , FTK4406 , FTK4407 , FTK4409 , FTK4410 , FTK4410D , FTK4414 , FTK4435 , K4145 , FTK4459 , FTK4503 , FTK4604 , FTK4703 , FTK4822 , FTK4828 , FTK4828D , FTK4828F .

History: MMBFJ113

 

 
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