FTK4438 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FTK4438
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8.2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 5.5 ns
Cossⓘ - Выходная емкость: 155 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
Тип корпуса: SOP8
FTK4438 Datasheet (PDF)
ftk4438.pdf
SEMICONDUCTOR FTK4438TECHNICAL DATADESCRIPTION The FTK4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switchor in PWM applications.Schematic diagramD D D DGENERAL FEATURES 7 6 58 VDS = 60V, ID = 8.2A RDS(ON)
ftk4435.pdf
SEMICONDUCTOR FTK4435TECHNICAL DATA DDESCRIPTION The FTK4435 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagramD D D DGENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -9.1A RDS(ON)
ftk4414.pdf
SEMICONDUCTOR FTK4414 TECHNICAL DATADDESCRIPTIONThe FTK4414 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD D D D VDS = 30V,ID = 8.5A 8 7 6 5RDS(ON)
ftk4410d.pdf
SEMICONDUCTORFTK4410DTECHNICAL DATAN-Channel MOSFET AIDESCRIPTIONCJThe FTK410D uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. DIM MILLIMETERSThis device is suitable for use as a load switch A 6 50 0 2B 5 60 0 2or in PWM applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAXI 2 30 0
ftk4406.pdf
SEMICONDUCTOR FTK4406TECHNICAL DATAN-Channel Power MOSFETSOP-8DESCRIPTION The FTK4406 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).DThe device is ideal for load switch and battery protection applications D D D8 57 6APPLICATIONS 1 2 3 4 Battery protection applicationsS S GS Load switch MARKING Q44
ftk4407.pdf
SEMICONDUCTOR FTK4407TECHNICAL DATAP-Channel Power MOSFETDESCRIPTION SOP-8 The FTK4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).The device is ideal for load switch and battery protection applications D D D D8 7 6 5APPLICATIONS Battery protection applications1 2 3 4S S S G Load switch MARKING Q440
ftk4409.pdf
SEMICONDUCTORFTK4409TECHNICAL DATASmall Signal MOSFET25 V, 0.75 A, Single, N-Channel, ESD Protection, SC-70/SOT-323Features Advance Planar Technology for Fast Switching, Low RDS(on)3 Higher Efficiency Extending Battery Life This is a Pb-Free Device 21SOT 323Applications Boost and Buck Converter Load Switch Battery ProtectionV(BR)DSS RDS(on) T
ftk4410.pdf
SEMICONDUCTOR FTK4410TECHNICAL DATADESCRIPTION N-Channel MOSFETThe FTK4410 uses advanced trench technology to provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). Schematic diagramD D D DGENERAL FEATURES 7 6 58 VDS = 30V,I = 7.5A DRDS(ON)
ftk4459.pdf
SEMICONDUCTOR FTK4459TECHNICAL DATA DDESCRIPTION The FTK4459 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagramD D D DGENERAL FEATURES 7 6 5 8 VDS = -30V,ID = -6.5A RDS(ON)
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
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