2SK1657 Todos los transistores

 

2SK1657 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1657
   Código: G19
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 7 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.9 V
   trⓘ - Tiempo de subida: 360 nS
   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 25 Ohm
   Paquete / Cubierta: SOT23

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2SK1657 Datasheet (PDF)

 ..1. Size:84K  tysemi
2sk1657.pdf

2SK1657

SMD TypeSMD Type MOSFETProduct specification2SK1657SOT-23Unit: mm+0.12.9-0.1+0.1Features 0.4-0.13Directly driven by Ics having a 3V power supply.Has low gate leakage currentIGSS= 5nA MAX.@VGS= 3.0V12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1GATE2.Emitter2 SOURCE3.collector3 DRAINAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

 ..2. Size:1204K  kexin
2sk1657.pdf

2SK1657
2SK1657

SMD Type MOSFETN-Channel MOSFET2SK1657SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features VDS (V) = 30V ID = 0.1A1 2+0.1+0.050.95 -0.1 0.1-0.01 RDS(ON) 45 (VGS = 2.5V)+0.11.9-0.1 RDS(ON) 25 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 3

 0.1. Size:1224K  kexin
2sk1657-3.pdf

2SK1657
2SK1657

SMD Type MOSFETN-Channel MOSFET2SK1657SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 30V ID = 0.1A 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 45 (VGS = 2.5V)1.9+0.1-0.2 RDS(ON) 25 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage V

 8.1. Size:366K  toshiba
2sk1653.pdf

2SK1657
2SK1657

www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com elec

 8.2. Size:237K  renesas
2sk1658.pdf

2SK1657
2SK1657

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:104K  no
2sk1651.pdf

2SK1657
2SK1657

 8.4. Size:1697K  jiangsu
2sk1658.pdf

2SK1657
2SK1657

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFETID V(BR)DSS RDS(on)MAX SOT-323 10@4V30V100mA15@2.5V1. GATE2. SOURCE3. DRAINFEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily

 8.5. Size:63K  inchange semiconductor
2sk1652.pdf

2SK1657
2SK1657

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1652 DESCRIPTION Drain Current ID=13A@ TC=25 Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS high voltage,high speed applications, such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYMBOL VALUE ARAMETER T VD

 8.6. Size:61K  inchange semiconductor
2sk1650.pdf

2SK1657
2SK1657

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1650 DESCRIPTION Drain Current ID=4A@ TC=25 Drain Source Voltage- : VDSS=900 (Min) APPLICATIONS high speed high current switching applications DC-DC converter and motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYMBOL VALUE ARAMETER T VDSS Drain-Source V

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