2SK1657
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1657
Marking Code: G19
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.9
V
|Id|ⓘ - Maximum Drain Current: 0.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 360
nS
Cossⓘ -
Output Capacitance: 10
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 25
Ohm
Package:
SOT23
2SK1657
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1657
Datasheet (PDF)
..1. Size:84K tysemi
2sk1657.pdf 
SMD TypeSMD Type MOSFETProduct specification2SK1657SOT-23Unit: mm+0.12.9-0.1+0.1Features 0.4-0.13Directly driven by Ics having a 3V power supply.Has low gate leakage currentIGSS= 5nA MAX.@VGS= 3.0V12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1GATE2.Emitter2 SOURCE3.collector3 DRAINAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
..2. Size:1204K kexin
2sk1657.pdf
SMD Type MOSFETN-Channel MOSFET2SK1657SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features VDS (V) = 30V ID = 0.1A1 2+0.1+0.050.95 -0.1 0.1-0.01 RDS(ON) 45 (VGS = 2.5V)+0.11.9-0.1 RDS(ON) 25 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 3
0.1. Size:1224K kexin
2sk1657-3.pdf
SMD Type MOSFETN-Channel MOSFET2SK1657SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 30V ID = 0.1A 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 45 (VGS = 2.5V)1.9+0.1-0.2 RDS(ON) 25 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage V
8.1. Size:366K toshiba
2sk1653.pdf
www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com electronic components distributor www.DataSheet4U.comDownloaded from Elcodis.com elec
8.2. Size:237K renesas
2sk1658.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.4. Size:1697K jiangsu
2sk1658.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFETID V(BR)DSS RDS(on)MAX SOT-323 10@4V30V100mA15@2.5V1. GATE2. SOURCE3. DRAINFEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily
8.5. Size:63K inchange semiconductor
2sk1652.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1652 DESCRIPTION Drain Current ID=13A@ TC=25 Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS high voltage,high speed applications, such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYMBOL VALUE ARAMETER T VD
8.6. Size:61K inchange semiconductor
2sk1650.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1650 DESCRIPTION Drain Current ID=4A@ TC=25 Drain Source Voltage- : VDSS=900 (Min) APPLICATIONS high speed high current switching applications DC-DC converter and motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYMBOL VALUE ARAMETER T VDSS Drain-Source V
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