FMH20N60S1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FMH20N60S1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 3120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de FMH20N60S1 MOSFET
- Selecciónⓘ de transistores por parámetros
FMH20N60S1 datasheet
fmh20n60s1.pdf
http //www.fujielectric.com/products/semiconductor/ FMH20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Pb-free lead terminal TO-3P(Q) 3.2 0.1 15.5max 1.5 0.2 13 0.2 4.5 0.2 RoHS compliant 10 0.2 Drain Applications For switching +0.3 +0.3 1.6 -0.1 1.6 -0.1 +0.3 2.2 -0
fmh20n60s1.pdf
isc N-Channel MOSFET Transistor FMH20N60S1 FEATURES Static Drain-Source On-Resistance R = 190m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
fmh20n50es.pdf
FMH20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P (Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5
fmh20n50e.pdf
FMH20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)
Otros transistores... 2SK4213 , IRF260B , IRF260C , 2N3458 , 2N3459 , 2N3460 , 2SJ599 , 2SK1657 , TK10A60D , IRF630B , IRFP264N , SM4912TSK , SST108 , SST109 , SST110 , SST111 , SST112 .
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