FMH20N60S1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FMH20N60S1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 3120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO3P
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FMH20N60S1 Datasheet (PDF)
fmh20n60s1.pdf

http://www.fujielectric.com/products/semiconductor/FMH20N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicPb-free lead terminalTO-3P(Q) 3.2 0.115.5max1.50.213 0.24.50.2RoHS compliant 10 0.2DrainApplicationsFor switching+0.3 +0.31.6 -0.11.6 -0.1+0.32.2 -0
fmh20n60s1.pdf

isc N-Channel MOSFET Transistor FMH20N60S1FEATURESStatic Drain-Source On-Resistance: R = 190m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDesigned for use in switch mode power supplies andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
fmh20n50es.pdf

FMH20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P (Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5
fmh20n50e.pdf

FMH20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
Otros transistores... 2SK4213 , IRF260B , IRF260C , 2N3458 , 2N3459 , 2N3460 , 2SJ599 , 2SK1657 , IRFZ24N , IRF630B , IRFP264N , SM4912TSK , SST108 , SST109 , SST110 , SST111 , SST112 .
History: BL3N105-U | 1N65L-T92-K | IPP120N10S4-05 | IRF3205PBF | 10N65KL-TA3-T | IRF6218 | VBE1806
History: BL3N105-U | 1N65L-T92-K | IPP120N10S4-05 | IRF3205PBF | 10N65KL-TA3-T | IRF6218 | VBE1806



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