FMH20N60S1 Specs and Replacement

Type Designator: FMH20N60S1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 3120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO3P

FMH20N60S1 substitution

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FMH20N60S1 datasheet

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FMH20N60S1

http //www.fujielectric.com/products/semiconductor/ FMH20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Pb-free lead terminal TO-3P(Q) 3.2 0.1 15.5max 1.5 0.2 13 0.2 4.5 0.2 RoHS compliant 10 0.2 Drain Applications For switching +0.3 +0.3 1.6 -0.1 1.6 -0.1 +0.3 2.2 -0... See More ⇒

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FMH20N60S1

isc N-Channel MOSFET Transistor FMH20N60S1 FEATURES Static Drain-Source On-Resistance R = 190m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒

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FMH20N60S1

FMH20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P (Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5... See More ⇒

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FMH20N60S1

FMH20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) ... See More ⇒

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Detailed specifications: 2SK4213, IRF260B, IRF260C, 2N3458, 2N3459, 2N3460, 2SJ599, 2SK1657, TK10A60D, IRF630B, IRFP264N, SM4912TSK, SST108, SST109, SST110, SST111, SST112

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