WNM4001 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WNM4001
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.8 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
Paquete / Cubierta: SOT523

Búsqueda de reemplazo de MOSFET WNM4001

WNM4001 Datasheet (PDF)

..1. Size:113K willsemi
wnm4001.pdf

WNM4001WNM4001Small Signal N-Channel, 20V, 0.5A, MOSFET Http://www.willsemi.com Top V(BR)DSS RDS(on) Max. ID MAX D30.7 @ 4.5V 0.5A20 V 0.85 @ 2.5V 0.3A 1 21.25 @ 1.8V 0.1A G SSOT-523 DescriptionsD3The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

8.1. Size:179K willsemi
wnm4006.pdf

WNM4006WNM4006Http://www.sh-willsemi.com Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( )0.126@ VGS=10V0.142@ VGS=4.5V 450.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 DescriptionsDThe WNM4006 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is su

8.2. Size:160K willsemi
wnm4002.pdf

WNM4002WNM4002Small Signal N-Channel, 20V, 0.3A, MOSFET Http://www.willsemi.com Top V(BR)DSS RDS(on) Typ.D31.4 @ 4.5V 20 V 2.2 @ 2.5V1 23.8 @ 1.8VG SSOT-523 DescriptionsD3The WNM4002 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

8.3. Size:86K tysemi
wnm4006.pdf

Product specificationWNM4006Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( )0.126@ VGS=10V0.142@ VGS=4.5V 450.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 DescriptionsD3The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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