WNM4001 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WNM4001 datasheet

..1. Size:113K willsemi
wnm4001.pdf pdf_icon

WNM4001 WNM4001 Small Signal N-Channel, 20V, 0.5A, MOSFET Http //www.willsemi.com Top V(BR)DSS RDS(on) Max. ID MAX D 3 0.7 @ 4.5V 0.5A 20 V 0.85 @ 2.5V 0.3A 1 2 1.25 @ 1.8V 0.1A G S SOT-523 Descriptions D 3 The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

8.1. Size:179K willsemi
wnm4006.pdf pdf_icon

WNM4006 WNM4006 Http //www.sh-willsemi.com Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( ) 0.126@ VGS=10V 0.142@ VGS=4.5V 45 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D The WNM4006 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is su

8.2. Size:160K willsemi
wnm4002.pdf pdf_icon

WNM4002 WNM4002 Small Signal N-Channel, 20V, 0.3A, MOSFET Http //www.willsemi.com Top V(BR)DSS RDS(on) Typ. D 3 1.4 @ 4.5V 20 V 2.2 @ 2.5V 1 2 3.8 @ 1.8V G S SOT-523 Descriptions D 3 The WNM4002 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

8.3. Size:86K tysemi
wnm4006.pdf pdf_icon

Product specification WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( ) 0.126@ VGS=10V 0.142@ VGS=4.5V 45 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D 3 The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use

Otros transistores... WNM2046 , WNM2046B , WNM2072 , WNM3003 , WNM3008 , WNM3011 , WNM3013 , WNM3017 , RU7088R , WNM4002 , WNM4006 , WNM4153 , WNM6001 , WNMD2153 , WNMD2154 , WNMD2158 , WNMD2160 .