WNM4001. Аналоги и основные параметры

Наименование производителя: WNM4001

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 6 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.8 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm

Тип корпуса: SOT523

Аналог (замена) для WNM4001

- подборⓘ MOSFET транзистора по параметрам

 

WNM4001 даташит

 ..1. Size:113K  willsemi
 wnm4001.pdf pdf_icon

WNM4001

WNM4001 WNM4001 Small Signal N-Channel, 20V, 0.5A, MOSFET Http //www.willsemi.com Top V(BR)DSS RDS(on) Max. ID MAX D 3 0.7 @ 4.5V 0.5A 20 V 0.85 @ 2.5V 0.3A 1 2 1.25 @ 1.8V 0.1A G S SOT-523 Descriptions D 3 The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

 8.1. Size:179K  willsemi
 wnm4006.pdf pdf_icon

WNM4001

WNM4006 WNM4006 Http //www.sh-willsemi.com Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( ) 0.126@ VGS=10V 0.142@ VGS=4.5V 45 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D The WNM4006 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is su

 8.2. Size:160K  willsemi
 wnm4002.pdf pdf_icon

WNM4001

WNM4002 WNM4002 Small Signal N-Channel, 20V, 0.3A, MOSFET Http //www.willsemi.com Top V(BR)DSS RDS(on) Typ. D 3 1.4 @ 4.5V 20 V 2.2 @ 2.5V 1 2 3.8 @ 1.8V G S SOT-523 Descriptions D 3 The WNM4002 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

 8.3. Size:86K  tysemi
 wnm4006.pdf pdf_icon

WNM4001

Product specification WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( ) 0.126@ VGS=10V 0.142@ VGS=4.5V 45 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D 3 The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... WNM2046, WNM2046B, WNM2072, WNM3003, WNM3008, WNM3011, WNM3013, WNM3017, RU7088R, WNM4002, WNM4006, WNM4153, WNM6001, WNMD2153, WNMD2154, WNMD2158, WNMD2160