WNMD2154 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WNMD2154
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.37 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V
|Id|ⓘ - Corriente continua
de drenaje: 0.88 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
Encapsulados: SOT563
Búsqueda de reemplazo de WNMD2154 MOSFET
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WNMD2154 datasheet
..1. Size:292K willsemi
wnmd2154.pdf 
WNMD2154 WNMD2154 Dual N-Channel, 20V, 0.88A, Small Signal MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V 0.320@ VGS=1.8V SOT-563 Descriptions D1 G2 S2 6 5 4 The WNMD2154 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suit
7.1. Size:941K willsemi
wnmd2158.pdf
WNMD2158 WNMD2158 www.sh-willsemi.com Dual N-Channel, 20V, 7.0A, Power MOSFET VDS (V) Rds(on) ( ) 0.0148@ VGS=4.5V 0.017@ VGS=3.1V 20 0.019@ VGS=2.5V ESD Rating 2000V HBM TSSOP-8L D1/D2 S2 S2 G2 8 7 6 5 Descriptions The WNMD2158 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate char
7.2. Size:268K willsemi
wnmd2153.pdf
WNMD2153 WNMD2153 Dual N-Channel, 20V, 0.89A, Small Signal MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V 0.320@ VGS=1.8V SOT-363 Descriptions D1 G2 S2 The WNMD2153 is N-Channel enhancement 6 5 4 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suita
8.1. Size:1188K willsemi
wnmd2166.pdf
WNMD2166 WNMD2166 Dual N-Channel, 20V, 4.0A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.022@ V =4.5V GS 0.023@ V =3.7V GS 20 0.024@ VGS=3.1V 0.027@ V =2.5V GS Package Descriptions G1 D1/D2 G2 6 5 4 The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate
8.2. Size:1796K willsemi
wnmd2179.pdf
WNMD2179 WNMD2179 www.sh-willsemi.com Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Rds(on) ( ) 0.0175@ VGS=4.5V 0.0195@ VGS=3.1V 20 0.0215@ VGS=2.5V ESD Rating 2000V HBM TSOT-23-6L Descriptions G1 D1/D2 G2 6 5 4 The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate
8.3. Size:2262K willsemi
wnmd2173.pdf
WNMD2173 WNMD2173 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m ) MOSFET2 MOSFET1 26@ VGS=4.5V Gate 1 Gate 2 27@ VGS=4.0V Gate 20 Protection 30@ VGS=3.1V Diode 33@ VGS=2.5V ESD Rating 2000V HBM Source 1 Source 2 Descriptions Body Diode The WNMD2173 is Dual N-Channel enhancement CSP 4L MOS Field Effect Transistor and connect
8.4. Size:1072K willsemi
wnmd2168.pdf
WNMD2168 WNMD2168 Dual N-Channel, 20V, 4.1A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.022@ VGS=4.5V 20 0.024@ VGS=3.1V 0.027@ VGS=2.5V Descriptions TSSOP-8L D1/D2 S2 S2 G2 8 7 6 5 The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device
8.5. Size:1228K willsemi
wnmd2167.pdf
WNMD2167 WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET Http// www.willsemi.com VDS (V) Typical Rds(on) ( ) 0.016@ V =4.5V GS 0.0175@ V =3.8V GS 20 0.018@ VGS=3.1V 0.020@ V =2.5V GS SOT-23-6L Descriptions G1 D1/D2 G2 5 4 6 The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON
8.6. Size:2437K willsemi
wnmd2171.pdf
WNMD2171 WNMD2171 www.sh-willsemi.com Dual N-Channel, 20V, 6A, Power MOSFET MOSFET2 MOSFET1 Vsss (V) Typ Rss(on) (m ) Gate 1 Gate 2 36@ VGS=4.5V Gate 38@ VGS=4.0V Protection 20 Diode 41@ VGS=3.1V 43@ VGS=2.5V ESD Rating 2000V HBM Source 1 Source 2 Body Diode Descriptions CSP 4L The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connec
8.7. Size:1928K willsemi
wnmd2178.pdf
WNMD2178 WNMD2178 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m ) 23.5@ VGS=4.5V 24@ VGS=4.0V 20 3 26@ VGS=3.1V 4 29@ VGS=2.5V 2 ESD Rating 2000V HBM 1 Descriptions Bottom View The WNMD2178 is Dual N-Channel enhancement DFN2X2-4L MOS Field Effect Transistor and connecting the Drains on the circuit board is not required becaus
8.8. Size:1757K willsemi
wnmd2165.pdf
WNMD2165 WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating 2000V HBM Descriptions SOT-363 The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2 trench technology and design to provide excellent 6 5 4 RDS (ON) with low gate charge. This
8.9. Size:2133K willsemi
wnmd2174.pdf
WNMD2174 WNMD2174 Dual N-Channel, 12V, 6A, Power MOSFET www.sh-willsemi.com MOSFET2 MOSFET1 Vsss (V) Typ Rss(on) (m ) Gate 1 Gate 2 19@ VGS=4.5V Gate 20@ VGS=4.0V Protection 12 Diode 22@ VGS=3.1V 25@ VGS=2.5V ESD Rating 2000V HBM Source 1 Source 2 Body Diode Descriptions CSP 4L The WNMD2174 is Dual N-Channel enhancement MOS Field Effect Transistor and connecti
8.10. Size:2755K willsemi
wnmd2162.pdf
WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.8A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) 14 @ VGS= 4.5V 14.5 @ VGS= 3.8V 20 15 @ VGS= 3.1V 16 @ VGS= 2.5V PDFN2.9 2.8-8L ESD protected D2 D1 D1 D2 Descriptions 5 8 7 6 The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to pro
8.11. Size:471K willsemi
wnmd2160.pdf
WNMD2160 WNMD2160 Dual N-Channel, 20V, 6.3A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.0157@ VGS=4.5V 0.018@ VGS=3.1V 20 0.020@ VGS=2.5V ESD Rating 2000V HBM SOT-23-6L Descriptions The WNMD2160 is N-Channel enhancement G1 D1/D2 G2 MOS Field Effect Transistor. Uses advanced trench 6 5 4 technology and design to provide excellent RDS (ON) with low gate cha
8.12. Size:971K willsemi
wnmd2176.pdf
WNMD2176 WNMD2176 Dual N-Channel, 20V, 2.6A, Power MOSFET www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) 56@ VGS=4.5V 20 76@ VGS=2.5V ESD Protected SOT-23-6L Descriptions D1 S1 D2 6 5 4 The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitab
8.13. Size:1648K willsemi
wnmd2172.pdf
WNMD2172 WNMD2172 Dual N-Channel, 20V, 7.0A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 20 0.017@ VGS=3.1V 0.018@ VGS=2.5V TSSOP-8L 0.021@ VGS=1.8V D1/D2 S2 S2 G2 ESD Protected 8 7 6 5 Descriptions The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to
Otros transistores... WNM3013
, WNM3017
, WNM4001
, WNM4002
, WNM4006
, WNM4153
, WNM6001
, WNMD2153
, AO4468
, WNMD2158
, WNMD2160
, WNMD2162
, WNMD2165
, WNMD2166
, WNMD2168
, WNMD2171
, WNMD2172
.
History: WNM07N65
| 2SK2466
