WNMD2154 PDF and Equivalents Search

WNMD2154 WNMD2154 Dual N-Channel, 20V, 0.88A, Small Signal MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V 0.320@ VGS=1.8V SOT-563 Descriptions D1 G2 S2 6 5 4 The WNMD2154 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suit... See More ⇒

WNMD2158 WNMD2158 www.sh-willsemi.com Dual N-Channel, 20V, 7.0A, Power MOSFET VDS (V) Rds(on) ( ) 0.0148@ VGS=4.5V 0.017@ VGS=3.1V 20 0.019@ VGS=2.5V ESD Rating 2000V HBM TSSOP-8L D1/D2 S2 S2 G2 8 7 6 5 Descriptions The WNMD2158 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate char... See More ⇒

WNMD2153 WNMD2153 Dual N-Channel, 20V, 0.89A, Small Signal MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V 0.320@ VGS=1.8V SOT-363 Descriptions D1 G2 S2 The WNMD2153 is N-Channel enhancement 6 5 4 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suita... See More ⇒

WNMD2166 WNMD2166 Dual N-Channel, 20V, 4.0A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.022@ V =4.5V GS 0.023@ V =3.7V GS 20 0.024@ VGS=3.1V 0.027@ V =2.5V GS Package Descriptions G1 D1/D2 G2 6 5 4 The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate ... See More ⇒

WNMD2179 WNMD2179 www.sh-willsemi.com Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Rds(on) ( ) 0.0175@ VGS=4.5V 0.0195@ VGS=3.1V 20 0.0215@ VGS=2.5V ESD Rating 2000V HBM TSOT-23-6L Descriptions G1 D1/D2 G2 6 5 4 The WNMD2179 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate ... See More ⇒

WNMD2173 WNMD2173 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m ) MOSFET2 MOSFET1 26@ VGS=4.5V Gate 1 Gate 2 27@ VGS=4.0V Gate 20 Protection 30@ VGS=3.1V Diode 33@ VGS=2.5V ESD Rating 2000V HBM Source 1 Source 2 Descriptions Body Diode The WNMD2173 is Dual N-Channel enhancement CSP 4L MOS Field Effect Transistor and connect... See More ⇒

WNMD2168 WNMD2168 Dual N-Channel, 20V, 4.1A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.022@ VGS=4.5V 20 0.024@ VGS=3.1V 0.027@ VGS=2.5V Descriptions TSSOP-8L D1/D2 S2 S2 G2 8 7 6 5 The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device... See More ⇒

WNMD2167 WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET Http// www.willsemi.com VDS (V) Typical Rds(on) ( ) 0.016@ V =4.5V GS 0.0175@ V =3.8V GS 20 0.018@ VGS=3.1V 0.020@ V =2.5V GS SOT-23-6L Descriptions G1 D1/D2 G2 5 4 6 The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON... See More ⇒

WNMD2171 WNMD2171 www.sh-willsemi.com Dual N-Channel, 20V, 6A, Power MOSFET MOSFET2 MOSFET1 Vsss (V) Typ Rss(on) (m ) Gate 1 Gate 2 36@ VGS=4.5V Gate 38@ VGS=4.0V Protection 20 Diode 41@ VGS=3.1V 43@ VGS=2.5V ESD Rating 2000V HBM Source 1 Source 2 Body Diode Descriptions CSP 4L The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connec... See More ⇒

WNMD2178 WNMD2178 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (m ) 23.5@ VGS=4.5V 24@ VGS=4.0V 20 3 26@ VGS=3.1V 4 29@ VGS=2.5V 2 ESD Rating 2000V HBM 1 Descriptions Bottom View The WNMD2178 is Dual N-Channel enhancement DFN2X2-4L MOS Field Effect Transistor and connecting the Drains on the circuit board is not required becaus... See More ⇒

WNMD2165 WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating 2000V HBM Descriptions SOT-363 The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2 trench technology and design to provide excellent 6 5 4 RDS (ON) with low gate charge. This... See More ⇒

WNMD2174 WNMD2174 Dual N-Channel, 12V, 6A, Power MOSFET www.sh-willsemi.com MOSFET2 MOSFET1 Vsss (V) Typ Rss(on) (m ) Gate 1 Gate 2 19@ VGS=4.5V Gate 20@ VGS=4.0V Protection 12 Diode 22@ VGS=3.1V 25@ VGS=2.5V ESD Rating 2000V HBM Source 1 Source 2 Body Diode Descriptions CSP 4L The WNMD2174 is Dual N-Channel enhancement MOS Field Effect Transistor and connecti... See More ⇒

WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.8A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) 14 @ VGS= 4.5V 14.5 @ VGS= 3.8V 20 15 @ VGS= 3.1V 16 @ VGS= 2.5V PDFN2.9 2.8-8L ESD protected D2 D1 D1 D2 Descriptions 5 8 7 6 The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to pro... See More ⇒

WNMD2160 WNMD2160 Dual N-Channel, 20V, 6.3A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.0157@ VGS=4.5V 0.018@ VGS=3.1V 20 0.020@ VGS=2.5V ESD Rating 2000V HBM SOT-23-6L Descriptions The WNMD2160 is N-Channel enhancement G1 D1/D2 G2 MOS Field Effect Transistor. Uses advanced trench 6 5 4 technology and design to provide excellent RDS (ON) with low gate cha... See More ⇒

WNMD2176 WNMD2176 Dual N-Channel, 20V, 2.6A, Power MOSFET www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) 56@ VGS=4.5V 20 76@ VGS=2.5V ESD Protected SOT-23-6L Descriptions D1 S1 D2 6 5 4 The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitab... See More ⇒

WNMD2172 WNMD2172 Dual N-Channel, 20V, 7.0A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 20 0.017@ VGS=3.1V 0.018@ VGS=2.5V TSSOP-8L 0.021@ VGS=1.8V D1/D2 S2 S2 G2 ESD Protected 8 7 6 5 Descriptions The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to ... See More ⇒