WPM2009D Todos los transistores

 

WPM2009D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WPM2009D
   Código: WPM2009
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.059 Ohm
   Paquete / Cubierta: DFN3X3-8L

 Búsqueda de reemplazo de MOSFET WPM2009D

 

WPM2009D Datasheet (PDF)

 ..1. Size:199K  willsemi
wpm2009d.pdf

WPM2009D
WPM2009D

WPM2009DWPM2009D-20V, -4A, 42m, 2.0W, DFN3x3, P-MOSFET Http://www.willsemi.com BottomDescriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D isenhancement power MOSFET with 2.0W power DFN3x3-8L dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging cir

 8.1. Size:914K  willsemi
wpm2006.pdf

WPM2009D
WPM2009D

WPM2006WPM2006Power MOSFET and Schottky DiodeFeatures Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyDFN2*2 -6LApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products1

 8.2. Size:2102K  willsemi
wpm2005b.pdf

WPM2009D
WPM2009D

WPM2005BWPM2005BPower MOSFET and Schottky DiodeFeaturesDFN32-8L Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered ProductsMOS

 8.3. Size:1397K  kexin
wpm2005b.pdf

WPM2009D
WPM2009D

SMD Type MOSFETP+Schottky Hybrid MOSFETWPM2005B (KPM2005B)DFN3X2-8L Unit:mm 0.35 (max)0.05 (max)0.24 (min) Features VDS (V) =-20V ID =-2.7 A (VGS =-10V) RDS(ON) 125m (VGS =-4.5V)0.25 (max)0.08 (min) RDS(ON) 160m (VGS =-2.5V)0.65 BSC0.80 0.13.00 BSC Ultra Low VF Schottky1 8A C72A C6S D3G D45 Absolu

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


WPM2009D
  WPM2009D
  WPM2009D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: PZF010HK | PZC010HK | PZC010BL | PZ607UZ | PZ5S6JZ | PZ5S6EA | PZ5G7EA | PZ5D8JZ | PZ5D8EA | PZ567JZ | PZ5203EMAA | PX607UZ | PX5S6JZ | PX5S6EA | PX5D8JZ-T | PX5D8EA

 

 

 
Back to Top