WPM2009D Datasheet and Replacement
Type Designator: WPM2009D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: DFN3X3-8L
WPM2009D substitution
WPM2009D Datasheet (PDF)
wpm2009d.pdf

WPM2009DWPM2009D-20V, -4A, 42m, 2.0W, DFN3x3, P-MOSFET Http://www.willsemi.com BottomDescriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D isenhancement power MOSFET with 2.0W power DFN3x3-8L dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging cir
wpm2006.pdf

WPM2006WPM2006Power MOSFET and Schottky DiodeFeatures Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyDFN2*2 -6LApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products1
wpm2005b.pdf

WPM2005BWPM2005BPower MOSFET and Schottky DiodeFeaturesDFN32-8L Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF SchottkyApplications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered ProductsMOS
wpm2005b.pdf

SMD Type MOSFETP+Schottky Hybrid MOSFETWPM2005B (KPM2005B)DFN3X2-8L Unit:mm 0.35 (max)0.05 (max)0.24 (min) Features VDS (V) =-20V ID =-2.7 A (VGS =-10V) RDS(ON) 125m (VGS =-4.5V)0.25 (max)0.08 (min) RDS(ON) 160m (VGS =-2.5V)0.65 BSC0.80 0.13.00 BSC Ultra Low VF Schottky1 8A C72A C6S D3G D45 Absolu
Datasheet: WNMD6003 , WPM1480 , WPM1481 , WPM1483 , WPM1485 , WPM1488 , WPM2005B , WPM2006 , IRFP250N , WPM2014 , WPM2015 , WPM2019 , WPM2026 , WPM2031 , WPM2037 , WPM2048 , WPM2049 .
History: DMN2100UDM | NTD3817N-1G
Keywords - WPM2009D MOSFET datasheet
WPM2009D cross reference
WPM2009D equivalent finder
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WPM2009D substitution
WPM2009D replacement
History: DMN2100UDM | NTD3817N-1G



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