WPM2009D PDF and Equivalents Search

 ..1. Size:199K  willsemi
 wpm2009d.pdf

WPM2009D WPM2009D -20V, -4A, 42m , 2.0W, DFN3x3, P-MOSFET Http //www.willsemi.com Bottom Descriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power DFN3x3-8L dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging cir... See More ⇒

 8.1. Size:914K  willsemi
 wpm2006.pdf

WPM2006 WPM2006 Power MOSFET and Schottky Diode Features Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky DFN2*2 -6L Applications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products 1... See More ⇒

 8.2. Size:2102K  willsemi
 wpm2005b.pdf

WPM2005B WPM2005B Power MOSFET and Schottky Diode Features DFN3 2-8L Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky Applications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products MOS... See More ⇒

 8.3. Size:1397K  kexin
 wpm2005b.pdf

SMD Type MOSFET P+Schottky Hybrid MOSFET WPM2005B (KPM2005B) DFN3X2-8L Unit mm 0.35 (max) 0.05 (max) 0.24 (min) Features VDS (V) =-20V ID =-2.7 A (VGS =-10V) RDS(ON) 125m (VGS =-4.5V) 0.25 (max) 0.08 (min) RDS(ON) 160m (VGS =-2.5V) 0.65 BSC 0.80 0.1 3.00 BSC Ultra Low VF Schottky 1 8 A C 7 2 A C 6 S D 3 G D 4 5 Absolu... See More ⇒