WPMD2008 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WPMD2008 datasheet

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wpmd2008.pdf pdf_icon

WPMD2008 WPMD2008 Http //www.sh-willsemi.com 4 Dual P-Channel, -20 V, - .1A, Power MOSFET Description The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2008 is Pb-free. Features V R MAX (BR)DSS DS(on) 110m @ -4.5V -20 V 138m @ -2.5V PI

8.1. Size:376K willsemi
wpmd2013.pdf pdf_icon

WPMD2013 WPMD2013 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V -20 0.860@ VGS=-1.8V SOT-563 Descriptions D1 G2 S2 6 5 4 The WPMD2013 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

8.2. Size:825K willsemi
wpmd2012.pdf pdf_icon

WPMD2012 WPMD2012 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V -20 0.910@ VGS=-1.8V SOT-363 Descriptions D1 G2 S2 6 5 4 The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

8.3. Size:194K willsemi
wpmd2011.pdf pdf_icon

WPMD2011 WPMD2011 Dual P-Channel -20V, -4.4A, 52m Power MOSFET Http //www.willsemi.com Rds(on) V(BR)DSS ( ) 0.052 @ -4.5V 0.064 @ -2.5V -20 0.080 @ -1.8V DFN2x2-6L 0.090 @ -1.5V Description D1 The WPMD2011 is P-Channel enhancement dual S1 D1 1 6 MOS Field Effect Transistor. Uses advanced trench G2 technology and design to provide excellent RDS(ON) with G1 2 5 low gat