WPMD2008 - Даташиты. Аналоги. Основные параметры

WPMD2008WPMD2008Http://www.sh-willsemi.com 4Dual P-Channel, -20 V, - .1A, Power MOSFET DescriptionThe WPMD2008 uses advanced trench technology and design toprovide excellent RDS(ON) with low gate charge. This device is suitablefor use in DC-DC conversion applications. Standard ProductWPMD2008 is Pb-free.FeaturesV R MAX(BR)DSS DS(on)110m @ -4.5V-20 V138m @ -2.5VPI

WPMD2013WPMD2013Dual P-Channel, -20V, -0.64A, Small SignalMOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.550@ VGS=-4.5V0.740@ VGS=-2.5V-200.860@ VGS=-1.8VSOT-563 DescriptionsD1 G2 S26 5 4The WPMD2013 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device

WPMD2012WPMD2012Dual P-Channel, -20V, -0.64A, Small SignalMOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.550@ VGS=-4.5V0.740@ VGS=-2.5V-200.910@ VGS=-1.8VSOT-363 DescriptionsD1 G2 S26 5 4The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device

WPMD2011 WPMD2011Dual P-Channel -20V, -4.4A, 52m Power MOSFET Http://www.willsemi.com Rds(on) V(BR)DSS()0.052 @ -4.5V0.064 @ -2.5V -200.080 @ -1.8VDFN2x2-6L 0.090 @ -1.5VDescriptionD1The WPMD2011 is P-Channel enhancement dual S1 D11 6MOS Field Effect Transistor. Uses advanced trench G2technology and design to provide excellent RDS(ON) with G1 2 5low gat

WPMD2010 WPMD2010 Http://www.sh-willsemi.com Dual P-Channel, -20 V, -3.6A, Power MOSFET Description The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2010 is Pb-free. Features V(BR)DSS RDS(on) Typ 75m@ -4.5V -20 V 101m@ -