BSR302N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSR302N
Código: LEs
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 Vtrⓘ - Tiempo de subida: 3.2 nS
Cossⓘ - Capacitancia de salida: 202 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET BSR302N
BSR302N Datasheet (PDF)
bsr302n.pdf
Product specificationBSR302NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 23mDS(on),max GS Enhancement modeV =4.5 V 36GS Logic level (4.5V)I 3.7 AD Avalanche rated Footprint compatible to SOT23PG-SC-59 dv /dt rated3 Pb-free lead plating; RoHS compliant Qualified according to AEC Q101
bsr30 bsr31 bsr33.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BSR30; BSR31; BSR33PNP medium power transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 01Philips Semiconductors Product specificationPNP medium power transistors BSR30; BSR31; BSR33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collectorAP
bsr30 bsr31 bsr33 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109BSR30; BSR31; BSR33PNP medium power transistorsProduct data sheet 2004 Dec 13Supersedes data of 1999 Apr 26NXP Semiconductors Product data sheetPNP medium power transistors BSR30; BSR31; BSR33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collectorAPPLICATIO
bsr30 bsr31 bsr33.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsr30.pdf
SOT89 PNP SILICON PLANARBSR30MEDIUM POWER TRANSISTORISSUE 4 JUNE 1996 COMPLEMENTARY TYPE BSR40CPARTMARKING DETAIL BR1ECBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO -70 VCollector-Emitter Voltage VCEO -60 VEmitter-Base Voltage VEBO -5 VPeak Pulse Current ICM -2 AContinuous Collector Current IC -1 APower Diss
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDB12N50U
History: FDB12N50U
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918