BSR302N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Product specificationBSR302NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 23mDS(on),max GS Enhancement modeV =4.5 V 36GS Logic level (4.5V)I 3.7 AD Avalanche rated Footprint compatible to SOT23PG-SC-59 dv /dt rated3 Pb-free lead plating; RoHS compliant Qualified according to AEC Q101

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BSR30; BSR31; BSR33PNP medium power transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 01Philips Semiconductors Product specificationPNP medium power transistors BSR30; BSR31; BSR33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collectorAP

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109BSR30; BSR31; BSR33PNP medium power transistorsProduct data sheet 2004 Dec 13Supersedes data of 1999 Apr 26NXP Semiconductors Product data sheetPNP medium power transistors BSR30; BSR31; BSR33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collectorAPPLICATIO

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SOT89 PNP SILICON PLANARBSR30MEDIUM POWER TRANSISTORISSUE 4 JUNE 1996 COMPLEMENTARY TYPE BSR40CPARTMARKING DETAIL BR1ECBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO -70 VCollector-Emitter Voltage VCEO -60 VEmitter-Base Voltage VEBO -5 VPeak Pulse Current ICM -2 AContinuous Collector Current IC -1 APower Diss