BSR302N - описание и поиск аналогов

Product specification BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 23 m DS(on),max GS Enhancement mode V =4.5 V 36 GS Logic level (4.5V) I 3.7 A D Avalanche rated Footprint compatible to SOT23 PG-SC-59 dv /dt rated 3 Pb-free lead plating; RoHS compliant Qualified according to AEC Q101

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSR30; BSR31; BSR33 PNP medium power transistors 1999 Apr 26 Product specification Supersedes data of 1997 Apr 01 Philips Semiconductors Product specification PNP medium power transistors BSR30; BSR31; BSR33 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector AP

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BSR30; BSR31; BSR33 PNP medium power transistors Product data sheet 2004 Dec 13 Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheet PNP medium power transistors BSR30; BSR31; BSR33 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector APPLICATIO

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SOT89 PNP SILICON PLANAR BSR30 MEDIUM POWER TRANSISTOR ISSUE 4 JUNE 1996 COMPLEMENTARY TYPE BSR40 C PARTMARKING DETAIL BR1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -70 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Diss