BSS214N Todos los transistores

 

BSS214N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS214N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.8 nS
   Cossⓘ - Capacitancia de salida: 46 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET BSS214N

 

BSS214N Datasheet (PDF)

 ..1. Size:224K  infineon
bss214n.pdf

BSS214N
BSS214N

BSS214NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Ta

 ..2. Size:125K  tysemi
bss214n.pdf

BSS214N
BSS214N

Product specificationBSS214NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-21

 0.1. Size:187K  infineon
bss214nw.pdf

BSS214N
BSS214N

BSS214NWOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT323 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package

 9.1. Size:564K  infineon
bss215p.pdf

BSS214N
BSS214N

BSS215P#

 9.2. Size:107K  tysemi
bss215p h6327.pdf

BSS214N
BSS214N

Product specificationBSS215POptiMOS P2 Small-Signal-TransistorProduct SummaryFeaturesV -20 VDS P-channelR V =-4.5 V 150mDS(on),max GS Enhancement modeV =-2.5 V 280GS Super Logic Level (2.5V rated)I -1.5 AD Avalanche ratedPG-SOT23 Qualified according to AEC Q1013 100% lead-free; RoHS compliant Halogen-free according to IEC6124

Otros transistores... WPMD2011 , WPMD2012 , WPMD2013 , WPMD3002 , BSR202N , BSR302N , BSR802N , BSS205N , 13N50 , BSS306N , BSS316N , BSS806N , DMG2307L , DMG3401LSN , DMG3407SSN , DMN2041L , DMN3110S .

 

 
Back to Top

 


BSS214N
  BSS214N
  BSS214N
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top