BSS214N Specs and Replacement
Type Designator: BSS214N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.8 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT23
BSS214N substitution
- MOSFET ⓘ Cross-Reference Search
BSS214N datasheet
bss214n.pdf
BSS214N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =4.5 V 140 m DS(on),max GS Enhancement mode V =2.5 V 250 GS Super Logic level (2.5V rated) I 1.5 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Ta... See More ⇒
bss214n.pdf
Product specification BSS214N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =4.5 V 140 m DS(on),max GS Enhancement mode V =2.5 V 250 GS Super Logic level (2.5V rated) I 1.5 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21... See More ⇒
bss214nw.pdf
BSS214NW OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =4.5 V 140 m DS(on),max GS Enhancement mode V =2.5 V 250 GS Super Logic level (2.5V rated) I 1.5 A D Avalanche rated Qualified according to AEC Q101 PG-SOT323 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package ... See More ⇒
Detailed specifications: WPMD2011, WPMD2012, WPMD2013, WPMD3002, BSR202N, BSR302N, BSR802N, BSS205N, NCEP15T14, BSS306N, BSS316N, BSS806N, DMG2307L, DMG3401LSN, DMG3407SSN, DMN2041L, DMN3110S
Keywords - BSS214N MOSFET specs
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