All MOSFET. BSS214N Datasheet

 

BSS214N Datasheet and Replacement


   Type Designator: BSS214N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT23
 

 BSS214N substitution

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BSS214N Datasheet (PDF)

 ..1. Size:224K  infineon
 bss214n.pdf pdf_icon

BSS214N

BSS214NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Ta

 ..2. Size:125K  tysemi
 bss214n.pdf pdf_icon

BSS214N

Product specificationBSS214NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-21

 0.1. Size:187K  infineon
 bss214nw.pdf pdf_icon

BSS214N

BSS214NWOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT323 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package

 9.1. Size:564K  infineon
 bss215p.pdf pdf_icon

BSS214N

BSS215P#

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History: HUF75344A3 | SWP069R10VS | IRLR7843CPBF | ME20P06 | 2N7002KT | MTE55N20J3 | SMK1040F

Keywords - BSS214N MOSFET datasheet

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