All MOSFET. BSS214N Datasheet

 

BSS214N Datasheet and Replacement


   Type Designator: BSS214N
   Marking Code: SVs
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT23
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BSS214N Datasheet (PDF)

 ..1. Size:224K  infineon
 bss214n.pdf pdf_icon

BSS214N

BSS214NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Ta

 ..2. Size:125K  tysemi
 bss214n.pdf pdf_icon

BSS214N

Product specificationBSS214NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-21

 0.1. Size:187K  infineon
 bss214nw.pdf pdf_icon

BSS214N

BSS214NWOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT323 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package

 9.1. Size:564K  infineon
 bss215p.pdf pdf_icon

BSS214N

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History: ALD1116DA | BL7N70-U

Keywords - BSS214N MOSFET datasheet

 BSS214N cross reference
 BSS214N equivalent finder
 BSS214N lookup
 BSS214N substitution
 BSS214N replacement

 

 
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