DMG2307L Todos los transistores

 

DMG2307L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMG2307L

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.76 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Tiempo de elevación (tr): 7.3 nS

Conductancia de drenaje-sustrato (Cd): 51.3 pF

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: SOT23

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DMG2307L Datasheet (PDF)

1.1. dmg2307l.pdf Size:123K _tysemi

DMG2307L
DMG2307L

Product specification DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low On-Resistance ID max V(BR)DSS RDS(ON) max • Low Input Capacitance TA = 25°C • Fast Switching Speed 90mΩ @ VGS = -10V -3.8A • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) -30V 134mΩ @ VGS = -4.5V -3.1A • Qualified to AEC-Q10

4.1. dmg2301u.pdf Size:148K _diodes

DMG2307L
DMG2307L

DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D Low Input/Output Leaka

4.2. dmg2302u.pdf Size:159K _diodes

DMG2307L
DMG2307L

DMG2302U N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D Low Input/Output Leaka

 4.3. dmg2305ux.pdf Size:364K _diodes

DMG2307L
DMG2307L

DMG2305UX P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID  Low On-Resistance V(BR)DSS RDS(ON) max Package TA = +25°C  Low Input Capacitance 52mΩ @VGS = -4.5V -5.0A  Fast Switching Speed -20V SOT23 -3.6A 100mΩ @VGS = -2.5V  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

4.4. dmg2301u.pdf Size:118K _tysemi

DMG2307L
DMG2307L

Product specification DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features • Low On-Resistance ID max V(BR)DSS RDS(ON) max • Low Input Capacitance TA = +25°C • Fast Switching Speed 80mΩ @ VGS = 4.5V -2.7A -20V • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110mΩ @ VGS = 2.5V -2.1A • Halogen and Antimony Free. “Green” Device (N

 4.5. dmg2302u.pdf Size:125K _tysemi

DMG2307L
DMG2307L

 Product specification DMG2302U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: SOT-23 • Low Input Capacitance • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020D • Low Input/Output Leakage • Terminal

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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