DMG2307L - описание и поиск аналогов

DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 90m @ VGS = -10V -3.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) -30V 134m @ VGS = -4.5V -3.1A

Product specification DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 90m @ VGS = -10V -3.8A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) -30V 134m @ VGS = -4.5V -3.1A Qualified to AEC-Q10

DMG2307L www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23

DMG2302UQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(ON) max TA = +25 C Low Input Capacitance Fast Switching Speed 90m @ VGS = 4.5V 4.2A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = 2.5V 2.7A Halogen and Antimony Free. Green Device

DMG2301LK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Low Input Capacitance BVDSS RDS(ON) Max TA = +25 C Fast Switching Speed ESD Protected Gate 160m @ VGS = -4.5V -2.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V Halogen and Antimony Free. Green Device (Note 3) 210

DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020D L

DMG2305UXQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance BVDSS RDS(ON) Max Package TA = +25 C Low Input Capacitance 52m @VGS = -4.5V -5.0A Fast Switching Speed -20V SOT23 -3.6A 100m @VGS = -2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

DMG2302UK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25 C Fast Switching Speed 90m @ VGS = 4.5V 2.8A ESD Protected Gate 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = 2.5V 2.4A Halogen and Antimony Free. Gre

DMG2301L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 120m @ VGS = -4.5V Halogen and Antimony Free. Green Device (Note 3) -20V -3A 150m @ VGS = -2.5V De

DMG2302U N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020D L

Product specification DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 80m @ VGS = 4.5V -2.7A -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = 2.5V -2.1A Halogen and Antimony Free. Green Device (N

Product specification DMG2302U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020D Low Input/Output Leakage Terminal

DMG2301U www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION