DMN3110S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMN3110S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.74 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.6 nS
Cossⓘ - Capacitancia de salida: 39.9 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.073 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de DMN3110S MOSFET
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DMN3110S datasheet
dmn3110s.pdf
DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 73m @ VGS = 10V 3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 30V 110m @ VGS = 4.5V 2.7A Quali
dmn3110s.pdf
Product specification DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 73m @ VGS = 10V 3.3A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 30V 110m @ VGS = 4.5V 2.7A Qualified to AEC-Q101 sta
dmn3110lcp3.pdf
DMN3110LCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Qg & Qgd BVDSS RDS(ON) Max TA = +25 C Small Footprint Low Profile 0.30mm Height 69m @ VGS = 8V 3.2A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 80m @ VGS = 4.5V 3.0A Halogen and Antimony Free. Green Device (Note 3) Description Mecha
dmn3112sss.pdf
DMN3112SSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 57m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D
Otros transistores... BSS214N , BSS306N , BSS316N , BSS806N , DMG2307L , DMG3401LSN , DMG3407SSN , DMN2041L , IRFP250 , DMP1045U , MGSF1N02LT1G , MGSF1N03LT1G , MGSF2N02ELT1G , NTR1P02LT1G , PMV170UN , PMV185XN , PMV33UPE .
History: AOB2144L | SM1A11NSK | WMN28N65F2
History: AOB2144L | SM1A11NSK | WMN28N65F2
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