XP151A11B0MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: XP151A11B0MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Paquete / Cubierta: SOT23
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XP151A11B0MR Datasheet (PDF)
xp151a11b0mr.pdf

XP151A11B0MRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23
xp151a11b0mr-g.pdf

Product specificationXP151A11B0MR-G Power MOSFET GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package ma
xp151a11b0mr-g.pdf

XP151A11B0MR-G ETR1117_003Power MOSFET GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high d
xp151a13comr.pdf

XP151A13COMR20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H
Otros transistores... PMV65UN , PMV90EN , QM3001K , QM3007K , WNM2023 , WNM2025 , WNM2027 , WNM2034 , RU6888R , XP151A12A2MR , XP151A13A0MR , XP152A11E5MR , XP152A12C0MR , CM100N03 , CM10N40 , CM10N60 , CM10N60AFZ .
History: IRF7821PBF-1 | AP2321GN-HF | BL3N150-B | SIB406EDK | SM4041DSK | VBFB1102M | YJD30N02A
History: IRF7821PBF-1 | AP2321GN-HF | BL3N150-B | SIB406EDK | SM4041DSK | VBFB1102M | YJD30N02A



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