XP151A11B0MR Datasheet and Replacement

XP151A11B0MRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23

Product specificationXP151A11B0MR-G Power MOSFET GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package ma

XP151A11B0MR-G ETR1117_003Power MOSFET GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high d

XP151A13COMR20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Power MOS FET Applications Notebook PCs DMOS Structure Cellular and portable phones Low On-State Resistance : 0.1 (max) On - board power supplies Ultra High-Speed Switching Li - ion battery systems Gate Protect Diode Built-in

Product specificationXP151A13A0MR-G Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package m

Product specificationXP151A12A2MR-G Power MOSFET GENERAL DESCRIPTION The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package ma

XP151A13A0MR-G ETR1119_003Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high

XP151A12A2MR-G ETR1118_003Power MOSFET GENERAL DESCRIPTION The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high d