CM120N06 Todos los transistores

 ..1. Size:126K  jdsemi
 cm120n06.pdf

R CM120N06 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 US P 2 3

 9.1. Size:453K  1
 cm1200dc-34n.pdf

CM1200DC-34N Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com HVIGBT Module 1200 Amperes/1700 Volts A DD U K (4 TYP) 42 Q F B C E Y 3 1 Description E1 Z E2 Powerex IGBTMOD Modules AA V G1 G2 M (3 TYP) are designed for use in switching W applications. Each module consists C1 C2 of two IGBT Transistors in

 9.2. Size:446K  1
 cm1200hcb-34n.pdf

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 cm1200ha-66h.pdf

MITSUBISHI HVIGBT MODULES CM1200HA-66H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Ind

 9.4. Size:62K  1
 cm1200db-34n.pdf

MITSUBISHI HVIGBT MODULES CM1200DB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200DB-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 2-element in a Pack Cu Baseplate Trench Gate IGBT CSTB

 9.5. Size:50K  1
 cm1200hb-66h.pdf

MITSUBISHI HVIGBT MODULES CM1200HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC c

 9.6. Size:71K  1
 cm1200hc-50h.pdf

MITSUBISHI HVIGBT MODULES CM1200HC-50H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction

 9.7. Size:183K  1
 cm1200hc-66h.pdf

MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction

 9.8. Size:156K  1
 cm1200hb-50h.pdf

 9.9. Size:173K  1
 cm1200e4c-34n.pdf

MITSUBISHI HVIGBT MODULES CM1200E4C-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200E4C-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack (for brake) AISiC Baseplate Trench

 9.10. Size:150K  1
 cm1200ha-50h.pdf

 9.11. Size:101K  1
 cm1200ha-34h.pdf

 9.12. Size:203K  1
 cm1200hg-66h.pdf

MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HG-66H IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC Baseplate A

 9.13. Size:179K  1
 cm1200hc-34h.pdf

MITSUBISHI HVIGBT MODULES CM1200HC-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover