CM120N06
MOSFET. Datasheet pdf. Equivalent
Type Designator: CM120N06
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Cossⓘ -
Output Capacitance: 435
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0076
Ohm
Package:
TO220
CM120N06
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CM120N06
Datasheet (PDF)
..1. Size:126K jdsemi
cm120n06.pdf
RCM120N06 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 USP 2 3
9.1. Size:453K 1
cm1200dc-34n.pdf
CM1200DC-34NPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODwww.pwrx.comHVIGBT Module1200 Amperes/1700 VoltsADDUK (4 TYP)42QFBC EY3 1Description:E1 Z E2Powerex IGBTMOD Modules AA VG1 G2 M (3 TYP) are designed for use in switching Wapplications. Each module consists C1 C2of two IGBT Transistors in
9.2. Size:446K 1
cm1200hcb-34n.pdf
CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES
9.3. Size:44K 1
cm1200ha-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind
9.4. Size:62K 1
cm1200db-34n.pdf
MITSUBISHI HVIGBT MODULESCM1200DB-34NHIGH POWER SWITCHING USE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200DB-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 2-element in a Pack Cu Baseplate Trench Gate IGBT : CSTB
9.5. Size:50K 1
cm1200hb-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HB-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC c
9.6. Size:71K 1
cm1200hc-50h.pdf
MITSUBISHI HVIGBT MODULESCM1200HC-50HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction
9.7. Size:183K 1
cm1200hc-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction
9.9. Size:173K 1
cm1200e4c-34n.pdf
MITSUBISHI HVIGBT MODULESCM1200E4C-34NHIGH POWER SWITCHING USE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200E4C-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack (for brake) AISiC Baseplate Trench
9.12. Size:203K 1
cm1200hg-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HG-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HG-66H IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC BaseplateA
9.13. Size:179K 1
cm1200hc-34h.pdf
MITSUBISHI HVIGBT MODULESCM1200HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover
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