CM120N06 Specs and Replacement
Type Designator: CM120N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Cossⓘ -
Output Capacitance: 435 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
Package: TO220
- MOSFET ⓘ Cross-Reference Search
CM120N06 datasheet
..1. Size:126K jdsemi
cm120n06.pdf 
R CM120N06 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 US P 2 3 ... See More ⇒
9.1. Size:453K 1
cm1200dc-34n.pdf
CM1200DC-34N Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com HVIGBT Module 1200 Amperes/1700 Volts A DD U K (4 TYP) 42 Q F B C E Y 3 1 Description E1 Z E2 Powerex IGBTMOD Modules AA V G1 G2 M (3 TYP) are designed for use in switching W applications. Each module consists C1 C2 of two IGBT Transistors in ... See More ⇒
9.3. Size:44K 1
cm1200ha-66h.pdf
MITSUBISHI HVIGBT MODULES CM1200HA-66H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Ind... See More ⇒
9.4. Size:62K 1
cm1200db-34n.pdf
MITSUBISHI HVIGBT MODULES CM1200DB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200DB-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 2-element in a Pack Cu Baseplate Trench Gate IGBT CSTB... See More ⇒
9.5. Size:50K 1
cm1200hb-66h.pdf
MITSUBISHI HVIGBT MODULES CM1200HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC c... See More ⇒
9.6. Size:71K 1
cm1200hc-50h.pdf
MITSUBISHI HVIGBT MODULES CM1200HC-50H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction... See More ⇒
9.7. Size:183K 1
cm1200hc-66h.pdf
MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction... See More ⇒
9.9. Size:173K 1
cm1200e4c-34n.pdf
MITSUBISHI HVIGBT MODULES CM1200E4C-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200E4C-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack (for brake) AISiC Baseplate Trench... See More ⇒
9.12. Size:203K 1
cm1200hg-66h.pdf
MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HG-66H IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC Baseplate A... See More ⇒
9.13. Size:179K 1
cm1200hc-34h.pdf
MITSUBISHI HVIGBT MODULES CM1200HC-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover... See More ⇒
Detailed specifications: CM10N60AFZ, CM10N60AZ, CM10N60F, CM10N65AFZ, CM10N65AZ, CM10N65F, CM10N80P, CM110N055, AOD4184A, CM12N60A, CM12N60AF, CM12N65, CM12N65A, CM12N65AF, CM12N65F, CM13N50, CM13N50F
Keywords - CM120N06 MOSFET specs
CM120N06 cross reference
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