CM120N06 Datasheet and Replacement
Type Designator: CM120N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Cossⓘ - Output Capacitance: 435 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
Package: TO220
CM120N06 substitution
CM120N06 Datasheet (PDF)
cm120n06.pdf

RCM120N06 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 USP 2 3
cm1200dc-34n.pdf

CM1200DC-34NPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODwww.pwrx.comHVIGBT Module1200 Amperes/1700 VoltsADDUK (4 TYP)42QFBC EY3 1Description:E1 Z E2Powerex IGBTMOD Modules AA VG1 G2 M (3 TYP) are designed for use in switching Wapplications. Each module consists C1 C2of two IGBT Transistors in
cm1200hcb-34n.pdf

CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES
cm1200ha-66h.pdf

MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind
Datasheet: CM10N60AFZ , CM10N60AZ , CM10N60F , CM10N65AFZ , CM10N65AZ , CM10N65F , CM10N80P , CM110N055 , AO4468 , CM12N60A , CM12N60AF , CM12N65 , CM12N65A , CM12N65AF , CM12N65F , CM13N50 , CM13N50F .
History: MSK7804 | IRF8010SP | ALD1103PBL | SML80J44F | 5HB03N8 | P80NF55-08 | APT5022BN
Keywords - CM120N06 MOSFET datasheet
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History: MSK7804 | IRF8010SP | ALD1103PBL | SML80J44F | 5HB03N8 | P80NF55-08 | APT5022BN



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