CS10N60FA9R Todos los transistores

 ..1. Size:272K  wuxi china
 cs10n60fa9r.pdf

Silicon N-Channel Power MOSFET R CS10N60F A9R General Description VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 4.1. Size:2795K  citcorp
 cs10n60fa9hd.pdf

CS10N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S E

 4.2. Size:281K  wuxi china
 cs10n60fa9hd.pdf

Silicon N-Channel Power MOSFET R CS10N60F A9HD VDSS 600 V General Description ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 6.1. Size:1369K  jilin sino
 jcs10n60f jcs10n60c.pdf

R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES

 6.2. Size:1843K  jilin sino
 jcs10n60bt jcs10n60st jcs10n60ct jcs10n60ft.pdf

N R N-CHANNEL MOSFET JCS10N60T Package MAIN CHARACTERISTICS ID 9.5 A VDSS 600 V Rdson 0.75 @Vgs=10V Qg 37.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 6.3. Size:351K  crhj
 cs10n60f a9hd.pdf

Silicon N-Channel Power MOSFET R CS10N60F A9HD VDSS 600 V General Description ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 6.4. Size:272K  crhj
 cs10n60f a9r.pdf

Silicon N-Channel Power MOSFET R CS10N60F A9R General Description VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 6.5. Size:280K  lzg
 cs10n60f.pdf

BRF10N60(CS10N60F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 6.6. Size:674K  convert
 cs10n60f cs10n60p.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N60F,CS10N60P 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N60F TO-220F CS10N60F CS

 6.7. Size:418K  convert
 cs10n60f cs10n60p cs1060k.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N60F,CS10N60P,CS1060K 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N60F TO-220F CS10