CS10N60F_A9R MOSFET. Datasheet pdf. Equivalent
Type Designator: CS10N60F_A9R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 40 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 23 nS
Drain-Source Capacitance (Cd): 136 pF
Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm
Package: TO220F
CS10N60F_A9R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS10N60F_A9R Datasheet (PDF)
1.1. cs10n60f a9r.pdf 
Size:272K _crhj
Silicon N-Channel Power MOSFET R ○ CS10N60F A9R General Description： VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
1.2. cs10n60f a9hd.pdf Size:351K _crhj
Silicon N-Channel Power MOSFET R ○ CS10N60F A9HD VDSS 600 V General Description： ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
3.1. cs10n60 a8r.pdf Size:266K _crhj
Silicon N-Channel Power MOSFET R ○ CS10N60 A8R General Description： VDSS 600 V CS10N60 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
3.2. cs10n60 a8hd.pdf Size:353K _crhj
Silicon N-Channel Power MOSFET R ○ CS10N60 A8HD VDSS 600 V General Description： ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
Datasheet: CS100N03_B4 , CS100N03_B8 , CS100N03F_B9 , CS10N50_A8R , CS10N50F_A9R , CS10N60_A8HD , CS10N60_A8R , CS10N60F_A9HD , IRFBC40 , CS10N65_A8HD , CS10N65_A8R , CS10N65F_A9HD , CS10N65F_A9R , CS10N70_A8D , CS10N70F_A9D , CS10N80_A8D , CS10N80_AND .
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