All MOSFET. CS10N60F_A9R Datasheet

 

CS10N60F_A9R MOSFET. Datasheet pdf. Equivalent

Type Designator: CS10N60F_A9R

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 23 nS

Drain-Source Capacitance (Cd): 136 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: TO220F

CS10N60F_A9R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS10N60F_A9R Datasheet (PDF)

1.1. cs10n60f a9r.pdf Size:272K _crhj

CS10N60F_A9R
CS10N60F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N60F A9R General Description: VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.2. cs10n60f a9hd.pdf Size:351K _crhj

CS10N60F_A9R
CS10N60F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N60F A9HD VDSS 600 V General Description: ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 3.1. cs10n60 a8r.pdf Size:266K _crhj

CS10N60F_A9R
CS10N60F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N60 A8R General Description: VDSS 600 V CS10N60 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

3.2. cs10n60 a8hd.pdf Size:353K _crhj

CS10N60F_A9R
CS10N60F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N60 A8HD VDSS 600 V General Description: ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Datasheet: CS100N03_B4 , CS100N03_B8 , CS100N03F_B9 , CS10N50_A8R , CS10N50F_A9R , CS10N60_A8HD , CS10N60_A8R , CS10N60F_A9HD , IRFBC40 , CS10N65_A8HD , CS10N65_A8R , CS10N65F_A9HD , CS10N65F_A9R , CS10N70_A8D , CS10N70F_A9D , CS10N80_A8D , CS10N80_AND .

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