CS7N65FA9D Todos los transistores

 

CS7N65FA9D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS7N65FA9D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO220F
 

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CS7N65FA9D Datasheet (PDF)

 ..1. Size:625K  wuxi china
 cs7n65fa9d.pdf pdf_icon

CS7N65FA9D

Silicon N-Channel Power MOSFET R CS7N65F A9D General Description VDSS 650 V CS7N65F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 5.1. Size:750K  wuxi china
 cs7n65fa9tdy.pdf pdf_icon

CS7N65FA9D

Silicon N-Channel Power MOSFET R CS7N65F A9TDY General Description VDSS 650 V CS7N65F A9TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 5.2. Size:275K  wuxi china
 cs7n65fa9r.pdf pdf_icon

CS7N65FA9D

Silicon N-Channel Power MOSFET R CS7N65F A9R General Description VDSS 650 V CS7N65F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:757K  jilin sino
 jcs7n65bb jcs7n65sb jcs7n65cb jcs7n65fb.pdf pdf_icon

CS7N65FA9D

N RN-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

MOSTRAR MÁS

Otros transistores... VBA5638 , CS10N65A8R , GN10N65A4 , CS10N65FA9R , VBA5311 , CS7N70A4R-G , VBA3638 , CS10N80AND , IRFZ48N , VBA3316 , VBA3222 , CS12N60A8R , CS6N80ARR-G , VBA2658 , CS12N60FA9R , VBA2333 , CS12N65A8R .

History: AOD661 | NCE70T540K | NVMFD5852NL

 

 
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