CS7N65FA9D PDF and Equivalents Search

 

CS7N65FA9D Specs and Replacement

Type Designator: CS7N65FA9D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO220F

CS7N65FA9D substitution

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CS7N65FA9D datasheet

 ..1. Size:625K  wuxi china
cs7n65fa9d.pdf pdf_icon

CS7N65FA9D

Silicon N-Channel Power MOSFET R CS7N65F A9D General Description VDSS 650 V CS7N65F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 5.1. Size:750K  wuxi china
cs7n65fa9tdy.pdf pdf_icon

CS7N65FA9D

Silicon N-Channel Power MOSFET R CS7N65F A9TDY General Description VDSS 650 V CS7N65F A9TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

 5.2. Size:275K  wuxi china
cs7n65fa9r.pdf pdf_icon

CS7N65FA9D

Silicon N-Channel Power MOSFET R CS7N65F A9R General Description VDSS 650 V CS7N65F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 7.1. Size:757K  jilin sino
jcs7n65bb jcs7n65sb jcs7n65cb jcs7n65fb.pdf pdf_icon

CS7N65FA9D

N R N-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply ... See More ⇒

Detailed specifications: VBA5638, CS10N65A8R, GN10N65A4, CS10N65FA9R, VBA5311, CS7N70A4R-G, VBA3638, CS10N80AND, STP65NF06, VBA3316, VBA3222, CS12N60A8R, CS6N80ARR-G, VBA2658, CS12N60FA9R, VBA2333, CS12N65A8R

Keywords - CS7N65FA9D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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