CS6N80ARR-G Todos los transistores

 

CS6N80ARR-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS6N80ARR-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: TO262
 

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CS6N80ARR-G Datasheet (PDF)

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CS6N80ARR-G

Silicon N-Channel Power MOSFET R CS6N80 ARR-G General Description VDSS 800 V CS6N80 ARR-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 6.1. Size:675K  wuxi china
 cs6n80arh.pdf pdf_icon

CS6N80ARR-G

Silicon N-Channel Power MOSFET R CS6N80 ARH General Description VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:848K  wuxi china
 cs6n80a8.pdf pdf_icon

CS6N80ARR-G

Silicon N-Channel Power MOSFET R CS6N80 A8 General Description VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 8.1. Size:847K  crhj
 cs6n80f a9.pdf pdf_icon

CS6N80ARR-G

Silicon N-Channel Power MOSFET R CS6N80F A9 General Description VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

MOSTRAR MÁS

Otros transistores... VBA5311 , CS7N70A4R-G , VBA3638 , CS10N80AND , CS7N65FA9D , VBA3316 , VBA3222 , CS12N60A8R , STP65NF06 , VBA2658 , CS12N60FA9R , VBA2333 , CS12N65A8R , CS5N65FA9R , CS12N65FA9R , CS12N70A8H , CS13N50A8D .

History: LSB55R050GT | UPA1950 | HM10P10D | FDU6688

 

 
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